30V N 通道 NexFET™ 功率 MOSFET，Vgs 为 20V
产品详细信息
参数
特性
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
- APPLICATIONS
- Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
- Optimized for Control and Synchronous FET Applications
描述
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
功能和引脚相同，但与相比较的设备不等效:
技术文档
| 类型 | 标题 | 下载最新的英文版本 | 发布 | |
|---|---|---|---|---|
| * | 数据表 | 30V, N-Channel NexFET™ Power MOSFETs 数据表 | 2011年 7月 19日 | |
| 技术文章 | Understanding the benefits of “lead-free” power MOSFETs | 2019年 2月 7日 | ||
| 选择指南 | 电源管理指南 2018 (Rev. K) | 2018年 7月 31日 | ||
| 技术文章 | When to use load switches in place of discrete MOSFETs | 2016年 2月 3日 | ||
| 技术文章 | 48V systems: Driving power MOSFETs efficiently and robustly | 2015年 10月 8日 | ||
| 应用手册 | 关于减小 NexFET 功率 MOSFET 震荡的方法 | 下载英文版本 | 2015年 5月 12日 | |
| 应用手册 | 2013 年 2 季度刊模拟应用学报 | 下载英文版本 | 2013年 6月 20日 | |
| 应用手册 | 通过减少功率损耗 , 同步整流的提升了效率 | 下载英文版本 | 2013年 6月 20日 |
设计与开发
有关其他条款或所需资源，请点击下面的任何链接来查看详情页面。硬件开发
说明
In many modern electronic applications there is a growing demand for circuits to convert a12-V bus to digital voltages as low as, but not limited to 1.8 V. The current requirements can range from below 1 A to over 15 A. For high-efficiency and small circuit size the TPS40055 wide-input synchronous (...)
特性
- 92% peak efficiency at 6 A
- 88% peak efficiency at 15 A
- 1.8V output at 15 A
- VIN range from 10 VDC to 14 VDC
- Small circuit size 1.4” x 2.5” SMT design, components on single side
- Line/load regulation < 0.5%
- High-frequency 300-kHz operation
- Transient deviation 60 mV with 10-A load step
说明
The TPS40077EVM-001 evaluation module (EVM) is a synchronous buck converter providing a fixed 1.8 V output at up to 10 A from a 12 V input bus. The EVM is designed to start up from a single supply; no additional bias voltage is required for start-up. The TPS40077 Reduced Pin Count (...)
特性
- 8 V to 16 V input range
- 1.8 V fixed output, adjustable with single resistor
- 10 A DC steady-state output current
- 300 kHz switching frequency (Fixed by TPS40077)
- Single main switch N-channel MOSFET and single synchronous rectifier N-channel MOSFET
- Double-sided 2" x 3" PCB with all components on top side
- Active (...)
说明
The TPS40090EVM-002 multi-phase dc-to-dc converter utilizes the TPS40090 multi-phase controller and TPS2834 adaptive driver to step down a 12 V input to 1.5 V at 420 kHz. The output current can exceed 100 A. The TPS40090 provides fixed-frequency, peak current-mode control with (...)
特性
Features the TPS40090 with the TPS2834 driver to step down 12 V to 1.5 V at 100 A.
说明
特性
- 8V to 20V Input Range
- 3.3V Fixed Output
- 20 ADC Steady State Output Current
- 300kHz Switching Frequency
- Two-Layer PCB with all Components on Top Side
- Convenient Test Points for Probing Switching Waveforms and Non-Invasive Loop Response Testing
说明
The TPS51116EVM evaluation module (EVM) is a dual-output converter for DDR and DDRII memory modules. It uses a 10 A synchronous buck converter to provide the core voltage (VDDQ) for DDR memory modules. The EVM is designed to use a 4.5 V to 28 V supply voltage and a 4.75 V to (...)
特性
- Up to 85% efficiency on the VDDQ switching regulator output
- Dual switching regulator / LDO output for both DDR core and termination voltages
- ± 3 A sink/source termination voltage LDO regulator
- 10 mA termination reference voltage for DDR input reference
- User selectable DDR and DDRII or externally referenced (...)
说明
The TPS51120EVM-001 evaluation module utilizes the TPS51120 in a high efficiency, dual synchronous buck converter providing 5 V at 6 A and 3.3 V at 6 A from 8 V to 25 V input. The user’s guide describes the TPS51120EVM-001 performance in D-CAP™ mode and RDS(on) current sensing.
The TPS51120 is a (...)
软件开发
设计工具和仿真
特性
- 针对任意一组输入参数，改变其电源条件并观察 TI 最高效的解决方案
- 从 TI 控制器预设列表中进行选择，或输入您的自定义 IC
- 按照有效功率损耗对解决方案排序，并按照 1k 相对定价、器件封装和总 PCB 封装进行对比
- 对比分立解决方案与电源块解决方案的功率损耗，高精度二阶寄生损耗也计算在内
- 针对任意指定解决方案绘制负载电流通过时的功率损耗
特性
- Calculates power loss for TI MOSFETs
CAD/CAE 符号
| 封装 | 引脚 | 下载 |
|---|---|---|
| (DQJ) | 8 | 视图选项 |