INA1H182-SEP

現行

耐輻射、低偏移、7nV/√Hz 雜訊、低功率儀器放大器

立即訂購

產品規格表

document-pdfAcrobat INA1H182-SEP Low Offset, 7nV/√ Hz Noise, Low-Power, Radiation-Tolerant, Precision Instrumentation Amplifier in Space-Enhanced Plastic datasheet (英文) PDF | HTML

INA1H182-SEP

現行

產品規格表

立即訂購

產品詳細資料

Number of channels

1

Vs (max) (V)

18

Vs (min) (V)

4.5

Input offset (±) (max) (µV)

55

Voltage gain (min) (V/V)

1

Voltage gain (max) (V/V)

10000

Noise at 1 kHz (typ) (nV√Hz)

7

Features

Overvoltage protection, Small Size, Super-beta

CMRR (min) (dB)

136

Input offset drift (±) (max) (µV/°C)

0.4

Input bias current (±) (max) (nA)

0.5

Iq (typ) (mA)

0.6

Bandwidth at min gain (typ) (MHz)

4.7

Gain error (±) (max) (%)

0.15

Operating temperature range (°C)

-55 to 125

Rating

Space

Type

Resistor

Gain nonlinearity (±) (max) (%)

0.0015

Output swing headroom (to negative supply) (typ) (V)

0.15

Output swing headroom (to positive supply) (typ) (V)

-0.15

Input common mode headroom (to negative supply) (typ) (V)

2

Input common mode headroom (to positive supply) (typ) (V)

-2

Noise at 0.1 Hz to 10 Hz (typ) (µVPP)

0.14

Number of channels

1

Vs (max) (V)

18

Vs (min) (V)

4.5

Input offset (±) (max) (µV)

55

Voltage gain (min) (V/V)

1

Voltage gain (max) (V/V)

10000

Noise at 1 kHz (typ) (nV√Hz)

7

Features

Overvoltage protection, Small Size, Super-beta

CMRR (min) (dB)

136

Input offset drift (±) (max) (µV/°C)

0.4

Input bias current (±) (max) (nA)

0.5

Iq (typ) (mA)

0.6

Bandwidth at min gain (typ) (MHz)

4.7

Gain error (±) (max) (%)

0.15

Operating temperature range (°C)

-55 to 125

Rating

Space

Type

Resistor

Gain nonlinearity (±) (max) (%)

0.0015

Output swing headroom (to negative supply) (typ) (V)

0.15

Output swing headroom (to positive supply) (typ) (V)

-0.15

Input common mode headroom (to negative supply) (typ) (V)

2

Input common mode headroom (to positive supply) (typ) (V)

-2

Noise at 0.1 Hz to 10 Hz (typ) (µVPP)

0.14

VSSOP (DGK)

8

14.7 mm² (3 mm × 4.9 mm)

Radiation tolerant
- Total ionizing dose (TID) RLAT for every wafer up to 30krad(Si)
- ELDRS-free up to TID = 30krad(Si)
- Single event latch-up (SEL) immune to 43MeV×cm2 /mg
- Single event effect (SEE) characterized to 43MeV×cm2 /mg
Space enhanced plastic
- Supports defense and aerospace applications
- Controlled baseline
- One assembly and test site
- One Fabrication site
- Extended product life cycle
- Product traceability
- Outgassing test performed per ASTM E595
- Au bondwire and NiPdAu lead finish
Low offset voltage: 10µV (typical)
Input stage voltage noise: 7nV/√Hz
Bandwidth: 2MHz at G = 1, 190kHz at G = 100
Inputs protected up to ±40V
Common-mode rejection: 110dB, G = 10 (min)
Power supply rejection: 110dB, G = 1 (min)
Supply current: 650µA (max)
Supply range:
- Single-supply: 4.5V to 18V
- Dual-supply: ±2.25V to ±9V
Packages: 8-pin VSSOP

Radiation tolerant
- Total ionizing dose (TID) RLAT for every wafer up to 30krad(Si)
- ELDRS-free up to TID = 30krad(Si)
- Single event latch-up (SEL) immune to 43MeV×cm2 /mg
- Single event effect (SEE) characterized to 43MeV×cm2 /mg
Space enhanced plastic
- Supports defense and aerospace applications
- Controlled baseline
- One assembly and test site
- One Fabrication site
- Extended product life cycle
- Product traceability
- Outgassing test performed per ASTM E595
- Au bondwire and NiPdAu lead finish
Low offset voltage: 10µV (typical)
Input stage voltage noise: 7nV/√Hz
Bandwidth: 2MHz at G = 1, 190kHz at G = 100
Inputs protected up to ±40V
Common-mode rejection: 110dB, G = 10 (min)
Power supply rejection: 110dB, G = 1 (min)
Supply current: 650µA (max)
Supply range:
- Single-supply: 4.5V to 18V
- Dual-supply: ±2.25V to ±9V
Packages: 8-pin VSSOP

The INA1H182-SEP is a radiation-tolerant, high-precision instrumentation amplifier that offers low power consumption and operates over a wide single-supply or dual-supply range. A single external resistor sets any gain from 1 to 10,000. The device has high precision as a result of super-beta input transistors, which provide low input offset voltage, offset voltage drift, input bias current, and input voltage and current noise. Additional circuitry protects the inputs against overvoltage up to ±40V.

The INA1H182-SEP is optimized to provide a high common-mode rejection ratio. At gain (G) = 1, the common-mode rejection ratio exceeds 90dB across the full input common-mode range. The device is designed for low-voltage operation from a 4.5V single supply, and dual supplies up to ±9V.

The INA1H182-SEP is available in an 8-pin VSSOP package.

The INA1H182-SEP is a radiation-tolerant, high-precision instrumentation amplifier that offers low power consumption and operates over a wide single-supply or dual-supply range. A single external resistor sets any gain from 1 to 10,000. The device has high precision as a result of super-beta input transistors, which provide low input offset voltage, offset voltage drift, input bias current, and input voltage and current noise. Additional circuitry protects the inputs against overvoltage up to ±40V.

The INA1H182-SEP is optimized to provide a high common-mode rejection ratio. At gain (G) = 1, the common-mode rejection ratio exceeds 90dB across the full input common-mode range. The device is designed for low-voltage operation from a 4.5V single supply, and dual supplies up to ±9V.

The INA1H182-SEP is available in an 8-pin VSSOP package.

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重要文件	類型	標題	格式選項	日期
*	資料表	INA1H182-SEP Low Offset, 7nV/√ Hz Noise, Low-Power, Radiation-Tolerant, Precision Instrumentation Amplifier in Space-Enhanced Plastic datasheet	PDF \| HTML	2026/3/24
*	輻射及可靠性報告	INA1H182-SEP Radiation-Tolerant, Low offset, Low Noise, Precision Instrumentation Amplifier TID Report		2026/3/18
*	輻射及可靠性報告	INA1H182-SEP Single-Event Effects (SEE) Radiation Report	PDF \| HTML	2026/3/18
*	輻射及可靠性報告	INA1H182-SEP Neutron Displacement Damage (NDD) Characterization		2026/3/18
*	輻射及可靠性報告	INA1H182-SEP Production Flow and Reliability Report	PDF \| HTML	2026/2/25
	選擇指南	TI Space Products (Rev. L)		2026/3/27