產品詳細資料

Number of channels 1 Vs (max) (V) 5.5 Vs (min) (V) 1.8 Input offset (±) (max) (µV) 25 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 1000 Noise at 1 kHz (typ) (nV√Hz) 50 Features Low power, Zero Drift CMRR (min) (dB) 80 Input offset drift (±) (max) (µV/°C) 0.1 Input bias current (±) (max) (nA) 0.2 Iq (typ) (mA) 0.198 Bandwidth at min gain (typ) (MHz) 0.15 Gain error (±) (max) (%) 0.5 Operating temperature range (°C) -55 to 210 Rating High Temp Type Resistor Gain nonlinearity (±) (max) (%) 0.001 Output swing headroom (to negative supply) (typ) (V) 0.05 Output swing headroom (to positive supply) (typ) (V) -0.05 Input common mode headroom (to negative supply) (typ) (V) 0.1 Input common mode headroom (to positive supply) (typ) (V) -0.1 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 2
Number of channels 1 Vs (max) (V) 5.5 Vs (min) (V) 1.8 Input offset (±) (max) (µV) 25 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 1000 Noise at 1 kHz (typ) (nV√Hz) 50 Features Low power, Zero Drift CMRR (min) (dB) 80 Input offset drift (±) (max) (µV/°C) 0.1 Input bias current (±) (max) (nA) 0.2 Iq (typ) (mA) 0.198 Bandwidth at min gain (typ) (MHz) 0.15 Gain error (±) (max) (%) 0.5 Operating temperature range (°C) -55 to 210 Rating High Temp Type Resistor Gain nonlinearity (±) (max) (%) 0.001 Output swing headroom (to negative supply) (typ) (V) 0.05 Output swing headroom (to positive supply) (typ) (V) -0.05 Input common mode headroom (to negative supply) (typ) (V) 0.1 Input common mode headroom (to positive supply) (typ) (V) -0.1 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 2
B0QFN (JD) 8 75.8373 mm² 10.29 x 7.37 CFP (HKJ) 8 38.985 mm² 6.9 x 5.65 CFP (HKQ) 8 38.985 mm² 6.9 x 5.65 DIESALE (KGD) See data sheet
  • Low Offset Voltage: 25 μV (max at 25°C), G ≥ 100
  • Low Drift: 0.2 µV/°C, G ≥ 1000
  • Low Noise: 55 nV/√Hz, G ≥ 100
  • High CMRR: 100 dB (min at 25°C), G ≥ 10
  • Supply Range: +1.8 V to +5.5 V
  • Input Voltage: (V–) +0.1 V to (V+) –0.1 V
  • Output Range: (V–) +0.05 V to (V+) –0.05V
  • Low Quiescent Current: 198 µA
  • RFI Filtered Inputs
  • Low Offset Voltage: 25 μV (max at 25°C), G ≥ 100
  • Low Drift: 0.2 µV/°C, G ≥ 1000
  • Low Noise: 55 nV/√Hz, G ≥ 100
  • High CMRR: 100 dB (min at 25°C), G ≥ 10
  • Supply Range: +1.8 V to +5.5 V
  • Input Voltage: (V–) +0.1 V to (V+) –0.1 V
  • Output Range: (V–) +0.05 V to (V+) –0.05V
  • Low Quiescent Current: 198 µA
  • RFI Filtered Inputs

The INA333 is a low-power, precision instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design, small size, and low power make it ideal for a wide range of portable applications.

A single external resistor sets any gain from 1 to 1000. The INA333 is designed to use an industry-standard gain equation: G = 1 + (100kΩ/RG).

The INA333 provides very low offset voltage (25 µV at 25°C, G ≥ 100), excellent offset voltage drift (0.2 µV/°C, G ≥ 100), and high common-mode rejection (100 dB at 25°C, G ≥ 10). It operates with power supplies as low as 1.8 V (±0.9V), and quiescent current is only 50 µA—ideal for battery-operated systems. Using autocalibration techniques to ensure excellent precision over the extended industrial temperature range, the INA333 also offers exceptionally low noise density (55 nV/√Hz) that extends down to dc.

The INA333 is is specified over the TA = –55°C to +210°C temperature range.

The INA333 is a low-power, precision instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design, small size, and low power make it ideal for a wide range of portable applications.

A single external resistor sets any gain from 1 to 1000. The INA333 is designed to use an industry-standard gain equation: G = 1 + (100kΩ/RG).

The INA333 provides very low offset voltage (25 µV at 25°C, G ≥ 100), excellent offset voltage drift (0.2 µV/°C, G ≥ 100), and high common-mode rejection (100 dB at 25°C, G ≥ 10). It operates with power supplies as low as 1.8 V (±0.9V), and quiescent current is only 50 µA—ideal for battery-operated systems. Using autocalibration techniques to ensure excellent precision over the extended industrial temperature range, the INA333 also offers exceptionally low noise density (55 nV/√Hz) that extends down to dc.

The INA333 is is specified over the TA = –55°C to +210°C temperature range.

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重要文件 類型 標題 格式選項 日期
* Data sheet Micro-Power, Zerø-Drift, Rail-to-Rail Out datasheet (Rev. C) 2013年 10月 22日
* Radiation & reliability report INA333SHKJ Reliability Report 2012年 5月 7日
* Radiation & reliability report INA333SHKQ Reliability Report 2012年 5月 7日
* Radiation & reliability report INA333SJD Reliability Report 2012年 5月 7日
Application note Importance of Input Bias Current Return Paths in Instrumentation Amplifier Apps PDF | HTML 2021年 7月 27日
E-book The Signal e-book: A compendium of blog posts on op amp design topics 2017年 3月 28日

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INA333 PSpice Model (Rev. G)

SBOM382G.ZIP (26 KB) - PSpice Model
模擬型號

INA333 TINA-TI Reference Design (Rev. F)

SBOC264F.TSC (1395 KB) - TINA-TI Reference Design
模擬型號

INA333 TINA-TI Spice Model (Rev. E)

SBOM310E.ZIP (11 KB) - TINA-TI Spice Model
計算工具

ANALOG-ENGINEER-CALC PC software analog engineer's calculator

The analog engineer’s calculator is designed to speed up many of the repetitive calculations that analog circuit design engineers use on a regular basis. This PC-based tool provides a graphical interface with a list of various common calculations ranging from setting operational-amplifier (...)

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PSpice® for TI 是有助於評估類比電路功能的設計和模擬環境。這款全功能設計和模擬套件使用 Cadence® 的類比分析引擎。PSpice for TI 包括業界最大的模型庫之一,涵蓋我們的類比和電源產品組合,以及特定類比行為模型,且使用無需支付費用。

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TINA-TI — 基於 SPICE 的類比模擬程式

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使用指南: PDF
參考設計

TIDA-00002 — 適用於高溫應用的嚴苛環境採集終端 (HEAT) EVM 平台

HEATEVM 是一款 MCM,旨在提供一個可用於訊號調整與處理器評估的高溫平台。此模組由一組完整的零組件組成,設計可承受高達 200 °C 的極端操作溫度。電路板採用聚酰亞胺材料製成,同樣適用於此類高溫環境。
Test report: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
B0QFN (JD) 8 Ultra Librarian
CFP (HKJ) 8 Ultra Librarian
CFP (HKQ) 8 Ultra Librarian
DIESALE (KGD)

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