SWRU543B January 2019 – June 2025 CC3230S , CC3230SF , CC3235MODS , CC3235MODSF , CC3235S , CC3235SF
The CC32xx device has up to 256KB of zero wait state, on-chip SRAM, to which application programs are downloaded and executed. The SRAM is used for both code and data, and is connected to the Multilayer-AHB bus-matrix of the chip. There is no restriction on relative size or partitioning of code and data on the micro-direct memory access (μDMA) controller except the lower 16KBs of SRAM.
The micro-direct memory access (µDMA) controller can transfer data to and from SRAM and various peripherals. The SRAM banks implement an advanced 4-way interleaved architecture, which almost eliminates the performance penalty when DMA and processor simultaneously access the SRAM.
Internal RAM has selective retention capability during low-power deep-sleep (LPDS) mode. Based on need, during LPDS mode the application can choose to retain 256KB, 192KB, 128KB, or 64KB. Retaining the memory during low-power mode provides a faster wakeup. TI provides an easy-to-use power-management framework for processor and peripheral context save and restore mechanisms based on SRAM retention.