5.5 Electrical Characteristics
over recommended ranges of supply voltage and operating case temperature (unless otherwise noted)
| PARAMETER |
TEST CONDITIONS(1)
|
MIN |
TYP |
MAX |
UNIT |
| VOH(2)
|
High-level output voltage |
LVCMOS (1.8 V) |
IO = IOH
|
DVDD18 – 0.45 |
|
|
V |
| DDR3A, DDR3B |
|
DVDD15 – 0.4 |
|
|
| I2C(3)
|
|
|
|
|
| VOL(2)
|
Low-level output voltage |
LVCMOS (1.8 V) |
IO = IOL
|
|
|
0.45 |
V |
| DDR3A, DDR3B |
|
|
|
0.4 |
| I2C |
IO = 3 mA, pulled up to 1.8 V |
|
|
0.4 |
| II(4)
|
Input current [DC] |
LVCMOS (1.8 V) |
No IPD/IPU |
–10 |
|
10 |
µA |
| Internal pullup |
50 |
100 |
170 |
| Internal pulldown |
–170 |
–100 |
–50 |
| I2C |
0.1 × DVDD18 V < VI< 0.9 × DVDD18 V |
–10 |
|
10 |
| IOH
|
High-level output current [DC] |
LVCMOS (1.8 V) |
|
|
|
–6 |
mA |
| DDR3A, DDR3B |
|
|
|
–8 |
| I2C(5)
|
|
|
|
|
| IOL
|
Low-level output current [DC] |
LVCMOS (1.8 V) |
|
|
|
6 |
mA |
| DDR3A, DDR3B |
|
|
|
8 |
| I2C |
|
|
|
3 |
| IOZ(6)
|
Off-state output current [DC] |
LVCMOS (1.8 V) |
|
–10 |
|
10 |
µA |
| DDR3A, DDR3B |
|
–10 |
|
10 |
| I2C |
|
–10 |
|
10 |
(1) For test conditions shown as MIN, MAX, or TYP, use the appropriate value specified in the recommended operating conditions table.
(2) For USB High-Speed, Full-Speed, and Low-Speed modes, USB I/Os adhere to Universal Serial Bus, revision 2.0 standard. For USB Super-Speed mode, USB I/Os adhere to Universal Serial Bus, revision 3.1 specification, revision 1.0 standard.
(3) I2C uses open collector I/Os and does not have a VOH minimum.
(4) II applies to input-only pins and bidirectional pins. For input-only pins, II indicates the input leakage current. For bidirectional pins, II includes input leakage current and off-state (Hi-Z) output leakage current.
(5) I2C uses open collector I/Os and does not have a IOH maximum.
(6) IOZ applies to output-only pins, indicating off-state (Hi-Z) output leakage current.