CSD22205L (正在供货)

CSD22205L –8-V P-Channel NexFET™ Power MOSFET

 

描述

This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.

特性

  • Low Resistance
  • Small Footprint 1.2 mm × 1.2 mm
  • Low Profile 0.35-mm Height
  • Lead Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free

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参数 与其它产品相比 P 通道 MOSFET 晶体管

 
VDS (V)
VGS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=1.8V (mOhms)
Id Peak (Max) (A)
Id Max Cont (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Package (mm)
High-Side PMOS
CSD22205L CSD22202W15 CSD22204W CSD22206W
-8    -8    -8    -8   
-6    -6    -6    -6   
Single    Single    Single    Single   
9.9    12.2    9.9    5.7   
15    17.4    14    9.1   
40         
-71    -48    -80    -108   
-7.4    -5    -5    -5   
6.5    6.5    18.9    11.2   
1.0    1    4.2    1.8   
1.2    1.6    3.2    2.1   
-0.7    -0.8    -0.7    -0.7   
LGA 1.2x1.2    WLP 1.5x1.5    WLP 1.5x1.5    WLP 1.5x1.5   
YES   YES   YES   YES