CSD17312Q5 30V、N 沟道 NexFET MOSFET™、单路 SON5x6、1.7mΩ | 德州仪器 TI.com.cn

CSD17312Q5 (正在供货) 30V、N 沟道 NexFET MOSFET™、单路 SON5x6、1.7mΩ

30V、N 沟道 NexFET MOSFET™、单路 SON5x6、1.7mΩ - CSD17312Q5
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描述

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

特性

  • Optimized for 5V Gate Drive
  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package
  • APPLICATIONS
    • Notebook Point-of-Load
    • Point-of-Load Synchronous Buck in Networking,
      Telecom and Computing Systems

NexFET is a trademark of Texas Instruments.

参数

与其它产品相比 N沟道MOSFET晶体管 邮件 下载到电子表格中
Part number 立即下单 VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level
CSD17312Q5 立即下单 30     Single     1.7     200     28     6     SON5x6     10     1.1       100     Yes    
CSD17301Q5A 立即下单 30     Single     3     181     19     4.3     SON5x6     10     1.1       100     Yes    
CSD17302Q5A 立即下单 30     Single     9     104     5.4     1.2     SON5x6     10     1.2     87       Yes    
CSD17303Q5 立即下单 30     Single     2.6     200     18     4     SON5x6     10     1.1       100     Yes    
CSD17304Q3 立即下单 30     Single     8.8     88     5.1     1.1     SON3x3     10     1.3     60     60     Yes    
CSD17305Q5A 立即下单 30     Single     3.6     181     14.1     3     SON5x6     10     1.1         Yes    
CSD17306Q5A 立即下单 30     Single     4.2     155     11.8     2.4     SON5x6     10     1.1         Yes    
CSD17307Q5A 立即下单 30