CSD16323Q3 25V、N 沟道 NexFET MOSFET™、单路 SON3x3、5.5mΩ | 德州仪器 TI.com.cn

CSD16323Q3
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25V、N 沟道 NexFET MOSFET™、单路 SON3x3、5.5mΩ

25V、N 沟道 NexFET MOSFET™、单路 SON3x3、5.5mΩ - CSD16323Q3
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描述

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

特性

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
    • Optimized for Control or Synchronous FET Applications

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参数

与其它产品相比 N沟道MOSFET晶体管 邮件 下载到电子表格中
Part number 立即下单 VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level
CSD16323Q3 立即下单 25     Single     5.5     112     6.2     1.1     SON3x3       10     1.1     21     60     Yes    
CSD16327Q3 立即下单 25     Single     4.8     112     6.2     1.1     SON3x3       10     1.2       60     Yes    
CSD16340Q3 立即下单 25     Single     5.5     115     6.5     1.2     SON3x3     6.1     10     0.85       60     Yes