CSD16322Q5 25V、N 沟道 NexFET MOSFET™、单路 SON5x6、5.8mΩ | 德州仪器 TI.com.cn

CSD16322Q5
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25V、N 沟道 NexFET MOSFET™、单路 SON5x6、5.8mΩ

25V、N 沟道 NexFET MOSFET™、单路 SON5x6、5.8mΩ - CSD16322Q5
数据表
 

描述

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

特性

  • Optimized for 5V Gate Drive
  • Ultralow Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck in Networking,
      Telecom and Computing Systems
    • Synchronous or Control FET Applications

NexFET is a trademark of Texas Instruments.

参数

与其它产品相比 N沟道MOSFET晶体管 邮件 下载到电子表格中
Part number 立即下单 VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level
CSD16322Q5 立即下单 25     Single     5.8     136     6.8     1.3     SON5x6     10     1.1     97     100     Yes    
CSD16321Q5 立即下单 25     Single     2.6     200     14     2.5     SON5x6     10     1.1       100     Yes    
CSD16325Q5 立即下单 25     Single     2.2     200     18     3.5     SON5x6     10     1.1       100     Yes