LMG2100R044
- Integrated 4.4mΩ half-bridge GaN FETs and driver
- 90V continuous, 100V pulsed voltage rating
- Package optimized for easy PCB layout
- High slew rate switching with low ringing
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- Gate driver capable of up to 10MHz switching
- Excellent propagation delay (33ns typical) and matching (2ns typical)
- Internal bootstrap supply voltage clamping to prevent GaN FET Overdrive
- Supply rail undervoltage for lockout protection
- Low power consumption
- Exposed top QFN package for top-side cooling
- Large GND pad for bottom-side cooling
The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.
GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.
技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | LMG2100R044 100V, 35A GaN Half-Bridge Power Stage 数据表 (Rev. B) | PDF | HTML | 2024-3-15 | ||
| 技术文章 | 1kW 高密度 LLC 电源模块中使用的平面变压器概述 | PDF | HTML | 英语版 | PDF | HTML | 2025-8-28 | |
| 应用简报 | GaN FET 在类人机器人中的应用 | PDF | HTML | 英语版 | PDF | HTML | 2025-1-17 | |
| 技术文章 | GaN 将革新四种中压应用的电子设计 | PDF | HTML | 英语版 | PDF | HTML | 2024-2-20 |
设计与开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
LMG2100EVM-078 — LMG2100 评估模块
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
PMP23340C2K — 采用 C2000™ MCU 且支持 GaN 的 48V 至 12V 1.1kW 1/8 砖型电源模块参考设计
PMP23340UCD — 采用数字电源隔离式控制器且支持 GaN 的 48V 至 12V 1.1kW 1/8 砖型参考设计
PMP23611 — 48V 输入、250W 汽车级双相降压转换器（配备 GaN 半桥功率级）参考设计
PMP31349 — 具有 GaN 开关的 30V 至 60V 输入、240W 降压转换器参考设计
PMP41068 — 采用 GaN 的 100W D 类音频放大器参考设计
此参考设计演示了采用 GaN HEMT 的单端 D 类功率级。本设计采用 LMG2100R044 作为电源开关，工作频率为 1MHz。
TIDA-010042 — 基于 GaN 的 400W MPPT 充电控制器和电源优化器参考设计
TIDA-010936 — 适用于集成电机驱动器的 48V/16A 小型三相 GaN 逆变器参考设计
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| WQFN-FCRLF (RAR) | 16 | Ultra Librarian |
订购和质量
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