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LMG3410R050

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具有集成驱动器和保护功能的 600V 50mΩ GaN

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数据表

LMG3410R050

正在供货
数据表 立即订购

产品详情

VDS (max) (V) 600 RDS(on) (mΩ) 50 ID (max) (A) 12 Features Bottom-side cooled, Latched overcurrent protection, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 150
VDS (max) (V) 600 RDS(on) (mΩ) 50 ID (max) (A) 12 Features Bottom-side cooled, Latched overcurrent protection, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 150
VQFN (RWH) 32 64 mm² (8 mm × 8 mm)
  • TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
  • Enables high density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20 ns Propagation delay for MHz operation
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25 to 100V/ns User adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with less than 100 ns response
    • Greater than 150 V/ns Slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Under voltage lock out (UVLO) Protection on all supply rails
  • Robust protection
    • LMG3410R050: Latched overcurrent protection
    • LMG3411R050: Cycle-by-cycle overcurrent protection
    • TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
    • Enables high density power conversion designs
      • Superior system performance over cascode or stand-alone GaN FETs
      • Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
      • Adjustable drive strength for switching performance and EMI control
      • Digital fault status output signal
      • Only +12 V unregulated supply needed
    • Integrated gate driver
      • Zero common source inductance
      • 20 ns Propagation delay for MHz operation
      • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
      • 25 to 100V/ns User adjustable slew rate
    • Robust protection
      • Requires no external protection components
      • Overcurrent protection with less than 100 ns response
      • Greater than 150 V/ns Slew rate immunity
      • Transient overvoltage immunity
      • Overtemperature protection
      • Under voltage lock out (UVLO) Protection on all supply rails
    • Robust protection
      • LMG3410R050: Latched overcurrent protection
      • LMG3411R050: Cycle-by-cycle overcurrent protection

      The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

      The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

      The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

      The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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      使用以下 LMG3410R050 开发套件，立即开始 GaN 设计：

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      技术文档

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      顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
      * 数据表 LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 数据表 (Rev. B) PDF | HTML 2020-1-16
      产品概述 HVDC QFN 封装 GaN 功率器件 PDF | HTML PDF | HTML 2026-4-9
      白皮书 使用 C2000™ 实时 MCU 实现高效 率和 EV 动力总成子系统集成 (Rev. A) PDF | HTML 英语版 (Rev.A) PDF | HTML 2023-7-25
      白皮书 实现 GaN 产品的寿命可靠性 英语版 PDF | HTML 2021-10-11
      白皮书 通过结合 TI GaN FET 实现功率密集和高效的数字电源系统 英语版 2021-1-5
      模拟设计期刊 宽带隙半导体：GaN 与 SiC 的性能和优势对比 英语版 2020-12-2
      更多文献资料 A Generalized Approach to Determine the Switching Lifetime of a GaN FET 2020-10-20
      应用手册 GaN 功率级设计的散热注意事项 (Rev. B) 英语版 (Rev.B) 2020-9-16
      更多文献资料 GaN FET Reliability to Power-line Surges Under Use-conditions 2019-3-25
      应用手册 Third quadrant operation of GaN 2019-2-25
      技术文章 Gallium nitride: supporting applications from watts to kilowatts PDF | HTML 2018-12-19
      应用简报 Overcurrent Protection in High-Density GaN Power Designs PDF | HTML 2018-10-19
      更多文献资料 Product-level Reliability of GaN Devices 2016-4-26
      白皮书 Application-Relevant Qualification of Emerging Semiconductor Power Devices, GaN 2016-3-31

      设计与开发

      如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。

      评估板

      LMG34XX-BB-EVM — 适用于 LMG341x 系列的 LMG34xx GaN 系统级评估主板

      LMG34XX-BB-EVM 是一款易于使用的分线板，可将 LMG3410-HB-EVM 等任何 LMG341x 半桥板配置为同步降压转换器。通过提供功率级、偏置电源和逻辑电路，该 EVM 可用于快速测量 GaN 器件的开关速度。该 EVM 能够在提供充分热管理（强制通风、低频运行等）的同时提供高达 8A 的输出电流，从而确保不超出最大工作温度。该 EVM 不适合用于瞬态测量，因为该板是开环板。

      仅需要一个脉宽调制输入，即可在电路板上生成互补的脉宽调制信号和相应的死区时间。提供了探测点，从而可使用具有短接地弹簧的示波器探针测量关键逻辑和功率级波形。

      用户指南: PDF
      支持的产品和硬件
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      无货
      子卡

      LMG3410EVM-018 — LMG3410R050 600V 50mΩ GaN 半桥子卡

      LMG3410EVM-018 将两个具有集成式驱动器和保护功能的 LMG3410R050 600-V GaN FET 配置到了一个半桥中。此 EVM 随附所有必要的辅助外围电路，旨在与大型系统配合使用。
      用户指南: PDF
      支持的产品和硬件
      有库存
      限制：
      ??asset.out-of-stock-ti_zh_CN??
      无货
      仿真模型

      LMG3410R050 Unencrypted PSpice Model (Rev. A)

      SNOM689A.ZIP (44 KB) - PSpice 模型
      支持的产品和硬件
      仿真模型

      LMG3410R150 Unencrypted PSPICE Trans Model Package (Rev. A)

      SNOM676A.ZIP (42 KB) - PSpice 模型
      支持的产品和硬件
      计算工具

      LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

      Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
      支持的产品和硬件
      计算工具

      SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet

      支持的产品和硬件
      计算工具

      SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet

      支持的产品和硬件
      参考设计

      PMP40690 — 采用 C2000™ MCU 和 GaN 的 4kW 交错式 CCM 图腾柱无桥 PFC 参考设计

      此参考设计是一款 4kW 交错式 CCM 图腾柱 (TTPL) 无桥 PFC 参考设计，采用了 64 引脚 C2000™ 微控制器、LM3410 氮化镓器件和 TMCS1100 霍尔传感器。它基于使用 C2000™ MCU 的 TIDM-02008 双向交互式 CCM TTPL 无桥 PFC 参考设计，并将整个 PCB 的尺寸降至 145mm x 105mm x 35mm。氮化镓 (GaN) 器件用于功率级，可实现 98.73% 的峰值效率。该设计包含切相、自适应死区时间和输入电容补偿等高级功能，可提高负载范围内的 PF 和效率，并利用非线性电压环路降低负载瞬态下的电压过冲和下冲。
      支持的产品和硬件
      封装 引脚 CAD 符号、封装和 3D 模型
      VQFN (RWH) 32 Ultra Librarian
      适用于评估类项目的 TI 标准条款与条件。

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