计算工具
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
LMG2104R022
- GaN half bridge power stage with integrated driver: 100V (GaN FET options: 2.2mΩ, 4.4mΩ)
- Efficient and high-density power conversion with
- Ultra-low propagation delay (20ns) and matching (2ns)
- Independent turn-on and turn-off slew-rate control for both the GaN FETs
- Zero-voltage detection (ZVD) reporting for dead-time optimization
- Ideal diode mode (IDM) to reduce third quadrant losses in soft switching application
- Input control flexibility
- Independent input mode (IIM) control
- Single PWM input with resistor programmable dead time option for IO-limited controllers
- Robust protection
- Interlock protection in IIM mode (LMG2104)
- Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
- VDS monitoring based cycle-by-cycle short-circuit protection
- Fault indication for over-temperature, supply under-voltage and short-circuit events
- External bias power supply: 5V
- Supports 3.3V and 5V input logic levels
- Parasitic optimized QFN package with exposed top pad to support top-side cooling
The LMG210xR0xx device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.
GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.
The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
技术文档
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查看全部 3 | 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | LMG210xR0xx 100V GaN Half-Bridge Power Stage With Integrated Protection and Smart-Switching Features 数据表 | PDF | HTML | 2026年 5月 19日 | ||
| EVM 用户指南 | LMG210XR022 评估模块 (Rev. A) | PDF | HTML | 英语版 (Rev.A) | PDF | HTML | 2025年 12月 29日 | |
| 证书 | LMG210XEVM-143 EU Declaration of Conformity (DoC) | 2025年 9月 18日 |
设计与开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
评估板
LMG210XEVM-121 — LMG2104R044 评估模块
LMG210XR044 评估模块是一款具有外部 PWM 信号的紧凑且易于使用的功率级。该电路板可配置为降压转换器、升压转换器或其他使用半桥的转换器拓扑。该器件可用于评估 LMG210XR044 作为硬开关转换器的性能，以便对诸如效率、开关速度和 dv/dt（压摆率）等测量结果进行采样。该 EVM 集成了一个 LMG210XR044 半桥电源模块，后者具有两个由 80V GaN FET 半桥栅极驱动器驱动的 100V、4.4mΩ GaN FET。请勿用于评估瞬态响应，因为这是具有外部 PWM 信号的开环板。该 EVM 安装有 LMG2104R044 器件。
评估板
LMG210XEVM-143 — LMG2104R022 评估模块
LMG210XR022 评估模块 (EVM) 是一款具有外部 PWM 信号的紧凑且易于使用的功率级。该电路板可配置为降压转换器、升压转换器或其他使用半桥的转换器拓扑。该 EVM 可用于评估 LMG210XR022 作为硬开关转换器的性能，以便对诸如效率、开关速度和 dv/dt（压摆率）等测量结果进行采样。该 EVM 集成了一个 LMG210XR022 半桥电源模块，后者具有两个由 80V GaN FET 半桥栅极驱动器驱动的 100V、2.2mΩ GaN FET。请勿用于评估瞬态响应，因为这是具有外部 PWM 信号的开环板。此 EVM 搭载 LMG2104R022 器件。
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| VQFN-FCRLF (VBN) | 18 | Ultra Librarian |
订购和质量
包含信息：
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
包含信息：
- 制造厂地点
- 封装厂地点