LMG3411R050
- TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
- Enables high density power conversion designs
- Superior system performance over cascode or stand-alone GaN FETs
- Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- Only +12 V unregulated supply needed
- Integrated gate driver
- Zero common source inductance
- 20 ns Propagation delay for MHz operation
- Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
- 25 to 100V/ns User adjustable slew rate
- Robust protection
- Requires no external protection components
- Overcurrent protection with less than 100 ns response
- Greater than 150 V/ns Slew rate immunity
- Transient overvoltage immunity
- Overtemperature protection
- Under voltage lock out (UVLO) Protection on all supply rails
- Robust protection
- LMG3410R050: Latched overcurrent protection
- LMG3411R050: Cycle-by-cycle overcurrent protection
The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 数据表 (Rev. B) | PDF | HTML | 2020-1-16 | ||
| 产品概述 | HVDC QFN 封装 GaN 功率器件 | PDF | HTML | PDF | HTML | 2026-4-9 | ||
| 白皮书 | 实现 GaN 产品的寿命可靠性 | 英语版 | PDF | HTML | 2021-10-11 | ||
| 白皮书 | 通过结合 TI GaN FET 实现功率密集和高效的数字电源系统 | 英语版 | 2021-1-5 | |||
| 模拟设计期刊 | 宽带隙半导体：GaN 与 SiC 的性能和优势对比 | 英语版 | 2020-12-2 | |||
| 应用手册 | GaN 功率级设计的散热注意事项 (Rev. B) | 英语版 (Rev.B) | 2020-9-16 | |||
| 应用手册 | Third quadrant operation of GaN | 2019-2-25 |
设计与开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
LMG34XX-BB-EVM — 适用于 LMG341x 系列的 LMG34xx GaN 系统级评估主板
LMG34XX-BB-EVM 是一款易于使用的分线板，可将 LMG3410-HB-EVM 等任何 LMG341x 半桥板配置为同步降压转换器。通过提供功率级、偏置电源和逻辑电路，该 EVM 可用于快速测量 GaN 器件的开关速度。该 EVM 能够在提供充分热管理（强制通风、低频运行等）的同时提供高达 8A 的输出电流，从而确保不超出最大工作温度。该 EVM 不适合用于瞬态测量，因为该板是开环板。
仅需要一个脉宽调制输入，即可在电路板上生成互补的脉宽调制信号和相应的死区时间。提供了探测点，从而可使用具有短接地弹簧的示波器探针测量关键逻辑和功率级波形。
LMG3410-HB-EVM — LMG3410R070 600V 70mΩ GaN 半桥子卡
LMG3411EVM-018 — 具有逐周期过流保护的 LMG3411R050 600V 50mΩ GaN 半桥子卡
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
PMP20873 — 效率高达 99% 且基于 GaN 的 1kW CCM 图腾柱功率因数校正 (PFC) 转换器参考设计
PMP21309 — 具有 HV GaN FET 的 24V/500W 谐振转换器参考设计
PMP21842 — 具有 HV GaN FET 的 12V/500W 谐振转换器参考设计
TIDA-010059 — 使用霍尔效应电流传感器、适用于 230VAC 电机驱动器的同相电流感应参考设计
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| VQFN (RWH) | 32 | Ultra Librarian |
订购和质量
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