LMG3411R150
- TI GaN process qualified through accelerated reliability in-application hard-switching profiles
- Enables high-density power conversion designs
- Superior system performance over cascode or stand-alone GaN FETs
- Low inductance 8 mm × 8 mm QFN package for ease of design and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- Only +12 V of unregulated supply needed
- Integrated gate driver
- Zero common source inductance
- 20-ns propagation delay for high-frequency design
- Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
- 25-V/ns to 100-V/ns adjustable slew rate
- Robust protection
- Requires no external protection components
- Overcurrent protection with <100 ns response
- Greater than 150-V/ns slew rate immunity
- Transient overvoltage immunity
- Overtemperature protection
- Undervoltage lockout (UVLO) protection on all supply rails
- Device Options:
- LMG3410R150: Latched overcurrent protection
- LMG3411R150: Cycle-by-cycle overcurrent proection
The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection 数据表 (Rev. B) | PDF | HTML | 2020-2-13 | ||
| 产品概述 | HVDC QFN 封装 GaN 功率器件 | PDF | HTML | PDF | HTML | 2026-4-9 | ||
| 白皮书 | 实现 GaN 产品的寿命可靠性 | 英语版 | PDF | HTML | 2021-10-11 | ||
| 白皮书 | 通过结合 TI GaN FET 实现功率密集和高效的数字电源系统 | 英语版 | 2021-1-5 | |||
| 模拟设计期刊 | 宽带隙半导体：GaN 与 SiC 的性能和优势对比 | 英语版 | 2020-12-2 | |||
| 更多文献资料 | A Generalized Approach to Determine the Switching Lifetime of a GaN FET | 2020-10-20 | ||||
| 应用手册 | GaN 功率级设计的散热注意事项 (Rev. B) | 英语版 (Rev.B) | 2020-9-16 | |||
| 更多文献资料 | GaN FET Reliability to Power-line Surges Under Use-conditions | 2019-3-25 | ||||
| 应用手册 | Third quadrant operation of GaN | 2019-2-25 | ||||
| 技术文章 | Searching for the newest innovations in power? Find them at APEC | PDF | HTML | 2019-2-9 |
设计与开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
LMG34XX-BB-EVM — 适用于 LMG341x 系列的 LMG34xx GaN 系统级评估主板
LMG34XX-BB-EVM 是一款易于使用的分线板，可将 LMG3410-HB-EVM 等任何 LMG341x 半桥板配置为同步降压转换器。通过提供功率级、偏置电源和逻辑电路，该 EVM 可用于快速测量 GaN 器件的开关速度。该 EVM 能够在提供充分热管理（强制通风、低频运行等）的同时提供高达 8A 的输出电流，从而确保不超出最大工作温度。该 EVM 不适合用于瞬态测量，因为该板是开环板。
仅需要一个脉宽调制输入，即可在电路板上生成互补的脉宽调制信号和相应的死区时间。提供了探测点，从而可使用具有短接地弹簧的示波器探针测量关键逻辑和功率级波形。
LMG3411EVM-031 — 具有逐周期过流保护的 LMG3411R150 600V 150mΩ GaN 半桥子卡
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
PMP22538 — 60W GaN PFC 反激式参考设计
TIDA-00915 — 适用于集成型驱动器的三相、1.25kW、200V 交流小型 GaN 逆变器参考设计
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| VQFN (RWH) | 32 | Ultra Librarian |
订购和质量
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