LMG3427R030

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具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET

产品详情

VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (RQZ) 54 144 mm² 12 x 12
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

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类型 标题 下载最新的英语版本 日期
* 数据表 LMG342xR030 600 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 数据表 (Rev. F) PDF | HTML 2024年 8月 27日

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子卡

LMG3422EVM-043 — LMG3422R030 600V 30mΩ 半桥子卡

LMG3422EVM-043 将两个 LMG3422R030 GaN FET 配置到具有锁存过流保护功能和所有必要辅助外围电路的半桥中。该 EVM 旨在与大型系统配合使用。
用户指南: PDF | HTML
英语版 (Rev.B): PDF | HTML
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计算工具

LMGXX-GAN-LLC-CALC GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
支持的产品和硬件

支持的产品和硬件

产品
氮化镓 (GaN) 功率级
LMG2100R026 100V 2.6mΩ 半桥氮化镓 (GaN) 功率级 LMG2100R044 具有集成驱动器和保护功能的 100V 4.4mΩ 半桥 GaN FET LMG2610 具有集成驱动器、保护和电流检测功能且适用于 ACF 的 650V 170/248mΩ GaN 半桥 LMG2650 具有集成驱动器、保护和电流检测功能的 650V、95mΩ GaN 半桥 LMG3410R050 具有集成驱动器和保护功能的 600V 50mΩ GaN LMG3410R070 具有集成驱动器和保护功能的 600V 70mΩ GaN LMG3410R150 具有集成驱动器和过流保护功能的 600V 150mΩ GaN LMG3411R050 具有集成驱动器和逐周期过流保护功能的 600V 50mΩ GaN LMG3411R070 具有集成驱动器和逐周期过流保护功能的 600V 70mΩ GaN LMG3411R150 具有集成驱动器和逐周期过流保护功能的 600V 150mΩ GaN LMG3422R030 具有集成驱动器、保护和温度报告功能的 600V 30mΩ GaN FET LMG3422R050 具有集成驱动器、保护和温度报告功能的 600V 50mΩ GaN FET LMG3425R030 具有集成驱动器、保护和温度报告功能以及理想二极管模式的 600V 30mΩ GaN FET LMG3425R050 具有集成驱动器、保护和温度报告功能以及理想二极管模式的 600V 50mΩ GaN FET LMG3426R030 具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET LMG3426R050 具有集成驱动器、保护和零电压检测功能的 600V 50mΩ GaN FET LMG3427R030 具有集成驱动器、保护和零电压检测功能的 600V 30mΩ GaN FET LMG3522R030 具有集成驱动器、保护和温度报告功能的 650V 30mΩ GaN FET LMG3522R030-Q1 具有集成驱动器、保护和温度报告功能的汽车类 650V 30mΩ GaN FET LMG3522R050 具有集成驱动器、保护和温度报告功能的 650V 50mΩ GaN FET LMG3526R030 具有集成驱动器、保护和零电压检测功能的 650V 30mΩ GaN FET LMG3526R050 具有集成驱动器、保护和零电压检测报告功能的 650V 50mΩ GaN FET LMG5200 80V GaN 半桥功率级
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VQFN (RQZ) 54 Ultra Librarian

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  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
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