CSD86311W1723

現行

25-V、N 通道 NexFET™ 功率 MOSFET、雙共源 WLP1.7 3 mm x 2.3 mm、42 mOhm

產品詳細資料

VDS (V) 25 VGS (V) 10 Type N-channel Configuration Dual Common Source Rds(on) at VGS=4.5 V (max) (mΩ) 42 Rds(on) at VGS=2.5 V (max) (mΩ) 50 VGSTH typ (typ) (V) 1 QG (typ) (nC) 3.1 QGD (typ) (nC) 0.33 QGS (typ) (nC) 0.85 ID - silicon limited at TC=25°C (A) 4.5 ID - package limited (A) 4.5 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 25 VGS (V) 10 Type N-channel Configuration Dual Common Source Rds(on) at VGS=4.5 V (max) (mΩ) 42 Rds(on) at VGS=2.5 V (max) (mΩ) 50 VGSTH typ (typ) (V) 1 QG (typ) (nC) 3.1 QGD (typ) (nC) 0.33 QGS (typ) (nC) 0.85 ID - silicon limited at TC=25°C (A) 4.5 ID - package limited (A) 4.5 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
DSBGA (YZG) 12 3.9375 mm² (— mm × — mm)
  • Dual N-Ch MOSFETs
  • Common Source Configuration
  • Small Footprint 1.7 mm × 2.3 mm
  • Ultra Low Qg and Qgd
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • APPLICATIONS
    • Battery Management
    • Battery Protection
    • DC-DC Converters

  • Dual N-Ch MOSFETs
  • Common Source Configuration
  • Small Footprint 1.7 mm × 2.3 mm
  • Ultra Low Qg and Qgd
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • APPLICATIONS
    • Battery Management
    • Battery Protection
    • DC-DC Converters

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications

下載 觀看有字幕稿的影片 影片

技術文件

找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 11
重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 Dual N-Channel NexFET Power MOSFET datasheet 2010/5/4
Application brief Estimating Leakage Currents of Power MOSFETs PDF | HTML 2025/10/31
應用說明 MOSFET Support and Training Tools (Rev. G) PDF | HTML 2025/10/27
應用說明 Avoid Common Mistakes When Selecting And Designing With Power MOSFETs PDF | HTML 2024/11/6
應用說明 Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 2024/3/25
應用說明 Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 2023/12/18
應用說明 Solving Assembly Issues with Chip Scale Power MOSFETs PDF | HTML 2023/12/14
應用說明 Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 2023/3/13
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 2022/5/31
應用說明 AN-1112 DSBGA Wafer Level Chip Scale Package (Rev. AI) 2019/6/14
選擇指南 Power Management Guide 2018 (Rev. R) 2018/6/25

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

支援軟體

NONSYNC-BOOST-FET-LOSS-CALC — NONSYNC BOOST FET LOSS Calculator

MOSFET power loss calculator for non-synchronous boost converter
支援產品和硬體
模擬型號

CSD86311W1723 Unencrypted PSpice Model (Rev. A)

SLLM124A.ZIP (8 KB) - PSpice 模型
支援產品和硬體
計算工具

SYNC-BUCK-FET-LOSS-CALC — Power Loss Calculation Tool for Synchronous Buck Converter

快速取捨尺寸、成本和性能,以根據應用條件選擇最佳 MOSFET。
支援產品和硬體
封裝 針腳 CAD 符號、佔位空間與 3D 模型
DSBGA (YZG) 12 Ultra Librarian

訂購與品質

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片