SLVAG11 March 2026 TPS1200-Q1 , TPS1210-Q1 , TPS1211-Q1 , TPS1212-Q1 , TPS1213-Q1 , TPS1214-Q1 , TPS1H000-Q1 , TPS1H100-Q1 , TPS1H200A-Q1 , TPS1HA08-Q1 , TPS1HB08-Q1 , TPS1HB16-Q1 , TPS1HB35-Q1 , TPS1HB50-Q1 , TPS1HC04-Q1 , TPS1HC08-Q1 , TPS1HC100-Q1 , TPS1HC120-Q1 , TPS1HC30-Q1 , TPS1HTC100-Q1 , TPS1HTC30-Q1 , TPS272C45 , TPS274160 , TPS274C65 , TPS274C65CP , TPS27S100 , TPS27SA08 , TPS27SA08-Q1 , TPS281C100 , TPS281C30 , TPS2H000-Q1 , TPS2H160-Q1 , TPS2HB16-Q1 , TPS2HB35-Q1 , TPS2HB50-Q1 , TPS2HC08-Q1 , TPS2HC120-Q1 , TPS2HC16-Q1 , TPS2HCS05-Q1 , TPS2HCS08-Q1 , TPS2HCS10-Q1 , TPS4800-Q1 , TPS4810-Q1 , TPS4811-Q1 , TPS4812-Q1 , TPS4813-Q1 , TPS4816-Q1 , TPS482H85-Q1 , TPS4H000-Q1 , TPS4H160-Q1 , TPS4HC120-Q1
High-side switching can be implemented with a MOSFET and discrete control circuitry. To compare the solution complexity of discrete and integrated circuits, Section 1 reviews three levels of discrete implementation of a high-side switch, from simplest to most complex.
| Level One: NFET-Controlled PFET | Level Two: NFET with a Step-Up Converter | Level Three: NFET, Step-Up Converter, Discrete Protections | High-Side Switch | |
|---|---|---|---|---|
| Implementation | Discrete | Discrete | Discrete | Integrated |
| Summary | Poor thermal
performance Large FET size High power dissipation |
Average thermal
performance High power dissipation |
Large design size Complex design |
Compact design size
Thermally efficient packaging Integrated protections with minimal external components |