SLVAG11 March   2026 TPS1200-Q1 , TPS1210-Q1 , TPS1211-Q1 , TPS1212-Q1 , TPS1213-Q1 , TPS1214-Q1 , TPS1H000-Q1 , TPS1H100-Q1 , TPS1H200A-Q1 , TPS1HA08-Q1 , TPS1HB08-Q1 , TPS1HB16-Q1 , TPS1HB35-Q1 , TPS1HB50-Q1 , TPS1HC04-Q1 , TPS1HC08-Q1 , TPS1HC100-Q1 , TPS1HC120-Q1 , TPS1HC30-Q1 , TPS1HTC100-Q1 , TPS1HTC30-Q1 , TPS272C45 , TPS274160 , TPS274C65 , TPS274C65CP , TPS27S100 , TPS27SA08 , TPS27SA08-Q1 , TPS281C100 , TPS281C30 , TPS2H000-Q1 , TPS2H160-Q1 , TPS2HB16-Q1 , TPS2HB35-Q1 , TPS2HB50-Q1 , TPS2HC08-Q1 , TPS2HC120-Q1 , TPS2HC16-Q1 , TPS2HCS05-Q1 , TPS2HCS08-Q1 , TPS2HCS10-Q1 , TPS4800-Q1 , TPS4810-Q1 , TPS4811-Q1 , TPS4812-Q1 , TPS4813-Q1 , TPS4816-Q1 , TPS482H85-Q1 , TPS4H000-Q1 , TPS4H160-Q1 , TPS4HC120-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
    1. 1.1 High-Side Switches Compared to Other Power Switch ICs
      1. 1.1.1 Discrete High-Side Implementations
        1. 1.1.1.1 Level One: NFET-Controlled PFET
        2. 1.1.1.2 Level Two: NFET with a Step-Up Converter
        3. 1.1.1.3 Level Three: NFET, Step-Up Converter and Discretely Implemented Protections and Diagnostics
      2. 1.1.2 Comparison to Load Switches
      3. 1.1.3 Comparison to Hot-Swap Controllers and eFuses (Integrated Hot Swaps)
      4. 1.1.4 Comparison to Motor Drivers and Gate Drivers
      5. 1.1.5 Summary
    2. 1.2 Common Automotive and Industrial Standards
      1. 1.2.1 Typical Automotive Voltage Ranges
      2. 1.2.2 Typical Industrial Voltage Ranges
      3. 1.2.3 Automotive Qualifications and Standards
      4. 1.2.4 Industrial Qualifications and Standards
  5. 2Architectural and Application Differences of High-Side Switches and Controllers
    1. 2.1 Architecture Differences
    2. 2.2 Application Differences
      1. 2.2.1 Load Driving
      2. 2.2.2 Input Protection and Circuit Breaking
    3. 2.3 Summary and Product Family Selection Matrix
  6. 3Core Features of High-Side Switches and Controllers
    1. 3.1 Protection Features
      1. 3.1.1 Overcurrent Protection
      2. 3.1.2 Thermal Shutdown
        1. 3.1.2.1 Absolute Thermal Shutdown
        2. 3.1.2.2 Relative Thermal Shutdown
        3. 3.1.2.3 Undervoltage Lockout and Overvoltage Lockout (UVLO and OVLO)
        4. 3.1.2.4 Inductive Clamping
      3. 3.1.3 Reverse Polarity Protection
        1. 3.1.3.1 Ground Networks
        2. 3.1.3.2 Reverse Polarity and Reverse Current Protection in High-Side Switch Controllers
    2. 3.2 Diagnostic Features
      1. 3.2.1 Analog Current Sense
      2. 3.2.2 Open Load and Short-to-Battery Detection
      3. 3.2.3 Junction Temperature Sensing
      4. 3.2.4 Input and Output Voltage Sensing
  7. 4Specialized Features
    1. 4.1 Capacitive Charging Features
    2. 4.2 Serial Communication and Corresponding Features
    3. 4.3 Features for Industrial Systems: Enhanced EFT, Reverse Current Blocking, LED Driving
    4. 4.4 Additional Specialized Features
      1. 4.4.1 Integrated Watchdog Timer
      2. 4.4.2 Cyclic Redundancy Check (CRC)
      3. 4.4.3 Steady-State Programmable PWM Switching
    5. 4.5 Smart eFuse High-Side Switch Protection Features
      1. 4.5.1 Energy Management with Programmable Time-Current Characteristics (I2T)
      2. 4.5.2 Power Optimization Through Low-Power Mode
      3. 4.5.3 Memory Retention After Power Cycling (NVM or EEPROM)
  8. 5Summary
  9. 6References

4.5.2 Power Optimization Through Low-Power Mode

As electrical demands increase with each generation of automobile, so grows the need for higher energy efficiency across power systems in the vehicle. A feature of the smart eFuse high-side switch solves this issue by introducing a low-power mode that still offers protection but at a much lower current draw. Low-power mode is intended for loads which require small amounts of current in the key-off state of the vehicle. The smart eFuse high-side switch can independently monitor the load while consuming little power itself, letting the MCU sleep. When the currents rise and cause an exit of the low-power mode, the smart eFuse high-side switch will notify the MCU with a wake signal. TI smart eFuse high-side switches feature a programmable low power mode exit current threshold. Low power mode is a way to further optimize power distribution in vehicles, making them more efficient and versatile in response to more demanding system requirements. This feature is implemented in two ways, either through the main pass FET in the device, shown in blue in Figure 4-5, or through a secondary, smaller internal FET shown in green.

Low-Power Mode Implementation for Integrated-FET Devices (Using Either the Main or a Secondary Integrated FET) Figure 4-5 Low-Power Mode Implementation for Integrated-FET Devices (Using Either the Main or a Secondary Integrated FET)
Low-Power Mode Implementation for External-FET Devices (Using a Secondary Gate Drive for a Smaller Power FET) Figure 4-6 Low-Power Mode Implementation for External-FET Devices (Using a Secondary Gate Drive for a Smaller Power FET)

The external-FET smart eFuse high-side switches implement low-power mode in a slightly different way. Some variants have a secondary, integrated FET through which the low-power mode current is passed. However, most other variants have a second gate drive to control a secondary external FET. The secondary FET is intended to be sized smaller and pass a smaller current. The device can automatically switch from low-power mode to steady state on its own, but manual control for low-power mode exit and entry is still available.

Demand for low-power mode is growing in automotive power distribution and there are also many places where the demand is becoming a requirement on standard loads. Because of this, TI has released high-side switches with low-power mode as a base feature. For these devices, such as TPS4HC120-Q1 and TPS2HC120-Q1, the low-power mode is basic and completely automatic, requiring very little additional control and supporting circuitry but enabling additional power optimization.