SLVAG11 March   2026 TPS1200-Q1 , TPS1210-Q1 , TPS1211-Q1 , TPS1212-Q1 , TPS1213-Q1 , TPS1214-Q1 , TPS1H000-Q1 , TPS1H100-Q1 , TPS1H200A-Q1 , TPS1HA08-Q1 , TPS1HB08-Q1 , TPS1HB16-Q1 , TPS1HB35-Q1 , TPS1HB50-Q1 , TPS1HC04-Q1 , TPS1HC08-Q1 , TPS1HC100-Q1 , TPS1HC120-Q1 , TPS1HC30-Q1 , TPS1HTC100-Q1 , TPS1HTC30-Q1 , TPS272C45 , TPS274160 , TPS274C65 , TPS274C65CP , TPS27S100 , TPS27SA08 , TPS27SA08-Q1 , TPS281C100 , TPS281C30 , TPS2H000-Q1 , TPS2H160-Q1 , TPS2HB16-Q1 , TPS2HB35-Q1 , TPS2HB50-Q1 , TPS2HC08-Q1 , TPS2HC120-Q1 , TPS2HC16-Q1 , TPS2HCS05-Q1 , TPS2HCS08-Q1 , TPS2HCS10-Q1 , TPS4800-Q1 , TPS4810-Q1 , TPS4811-Q1 , TPS4812-Q1 , TPS4813-Q1 , TPS4816-Q1 , TPS482H85-Q1 , TPS4H000-Q1 , TPS4H160-Q1 , TPS4HC120-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
    1. 1.1 High-Side Switches Compared to Other Power Switch ICs
      1. 1.1.1 Discrete High-Side Implementations
        1. 1.1.1.1 Level One: NFET-Controlled PFET
        2. 1.1.1.2 Level Two: NFET with a Step-Up Converter
        3. 1.1.1.3 Level Three: NFET, Step-Up Converter and Discretely Implemented Protections and Diagnostics
      2. 1.1.2 Comparison to Load Switches
      3. 1.1.3 Comparison to Hot-Swap Controllers and eFuses (Integrated Hot Swaps)
      4. 1.1.4 Comparison to Motor Drivers and Gate Drivers
      5. 1.1.5 Summary
    2. 1.2 Common Automotive and Industrial Standards
      1. 1.2.1 Typical Automotive Voltage Ranges
      2. 1.2.2 Typical Industrial Voltage Ranges
      3. 1.2.3 Automotive Qualifications and Standards
      4. 1.2.4 Industrial Qualifications and Standards
  5. 2Architectural and Application Differences of High-Side Switches and Controllers
    1. 2.1 Architecture Differences
    2. 2.2 Application Differences
      1. 2.2.1 Load Driving
      2. 2.2.2 Input Protection and Circuit Breaking
    3. 2.3 Summary and Product Family Selection Matrix
  6. 3Core Features of High-Side Switches and Controllers
    1. 3.1 Protection Features
      1. 3.1.1 Overcurrent Protection
      2. 3.1.2 Thermal Shutdown
        1. 3.1.2.1 Absolute Thermal Shutdown
        2. 3.1.2.2 Relative Thermal Shutdown
        3. 3.1.2.3 Undervoltage Lockout and Overvoltage Lockout (UVLO and OVLO)
        4. 3.1.2.4 Inductive Clamping
      3. 3.1.3 Reverse Polarity Protection
        1. 3.1.3.1 Ground Networks
        2. 3.1.3.2 Reverse Polarity and Reverse Current Protection in High-Side Switch Controllers
    2. 3.2 Diagnostic Features
      1. 3.2.1 Analog Current Sense
      2. 3.2.2 Open Load and Short-to-Battery Detection
      3. 3.2.3 Junction Temperature Sensing
      4. 3.2.4 Input and Output Voltage Sensing
  7. 4Specialized Features
    1. 4.1 Capacitive Charging Features
    2. 4.2 Serial Communication and Corresponding Features
    3. 4.3 Features for Industrial Systems: Enhanced EFT, Reverse Current Blocking, LED Driving
    4. 4.4 Additional Specialized Features
      1. 4.4.1 Integrated Watchdog Timer
      2. 4.4.2 Cyclic Redundancy Check (CRC)
      3. 4.4.3 Steady-State Programmable PWM Switching
    5. 4.5 Smart eFuse High-Side Switch Protection Features
      1. 4.5.1 Energy Management with Programmable Time-Current Characteristics (I2T)
      2. 4.5.2 Power Optimization Through Low-Power Mode
      3. 4.5.3 Memory Retention After Power Cycling (NVM or EEPROM)
  8. 5Summary
  9. 6References

3.1.2.4 Inductive Clamping

Inductors resist changes in current when an external voltage is applied. Driving inductive loads results in two important behaviors: slower current slew rates during turn-on and output pull-down during inductive turn-off. During turn-on, a slower current slew rate allows for more time for the device to detect overcurrent events, so inductance does not present an issue.

However, when a high-side switch is turned off while driving an inductive load, the inductor will resist the decrease in current. In an ideal case, when the high-side switch is turned off, the current will instantaneously go to 0A. Using Equation 1, we can evaluate what the inductor voltage will be when this happens.

Equation 1. V i n d u c t o r = L i n d u c t o r × d I d t i n d u c t o r

When the current immediately decreases from a nonzero value to 0, dI/dtinductor is negative infinity, and thus Vinductor is negative infinity volts. Since ground is a stable reference, the output node of the high-side switch will be pulled to negative infinity volts and cause component and system damage. In reality, all nodes have some amount of parasitic capacitance. Good analog design dictates using decoupling and ESD capacitors, but these capacitances are small and can only reduce the current slew rate by a marginal amount. Thus, when an inductive load is turned off by a high-side switch, the positive node of the load is pulled quickly to a highly negative value. To protect the high-side switch and surrounding circuitry, TI high-side switches implement a dynamic drain-source clamp called the VDS clamp. This circuitry partially turns on the FET when the FET source reaches a certain voltage below the drain—typically around 40V—limiting the drain-source voltage to the VDS clamp voltage and quickly discharging the energy stored in the inductor.

The VDS clamp feature provides an elegant, integrated design for quickly dissipating inductive energy in an inductive load. However, when the VDS clamp activates, it causes high power dissipation in the FET which can damage the device if activated for too long, and thus the VDS clamp can only safely dissipate a certain amount of inductive energy. If the maximum inductive energy of the load exceeds the discharge rating of the high-side switch, an external design such as a flyback diode or TVS clamp must be used.

Simplified Schematic (left) and Timing Diagram (right) of a High-Side Switch Driving an Inductive Load Figure 3-2 Simplified Schematic (left) and Timing Diagram (right) of a High-Side Switch Driving an Inductive Load