SLUSE53 December   2024 BQ25751

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics (BQ25751)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Power-On-Reset
      2. 7.3.2 Device Power-Up From Battery Without Input Source
      3. 7.3.3 Device Power Up from Input Source
        1. 7.3.3.1 VAC Operating Window Programming (ACUV and ACOV)
        2. 7.3.3.2 REGN Regulator (REGN LDO)
        3. 7.3.3.3 Switching Frequency and Synchronization (FSW_SYNC)
        4. 7.3.3.4 Device HIZ Mode
      4. 7.3.4 Battery Charging Management
        1. 7.3.4.1 Autonomous Charging Cycle
          1. 7.3.4.1.1 Charge Current Programming (ICHG pin and ICHG_REG)
        2. 7.3.4.2 Lead Acid Battery Charging Profile
        3. 7.3.4.3 Absorb Charge to Float Charge for Lead-Acid
        4. 7.3.4.4 CV Timer
        5. 7.3.4.5 Thermistor Qualification
          1. 7.3.4.5.1 Temperature Compensated Charging
          2. 7.3.4.5.2 Cold/Hot Temperature Window in Reverse Mode
      5. 7.3.5 Power Path Management
        1. 7.3.5.1 Dynamic Power Management: Input Voltage and Input Current Regulation
          1. 7.3.5.1.1 Input Current Regulation
            1. 7.3.5.1.1.1 ILIM_HIZ Pin
          2. 7.3.5.1.2 Input Voltage Regulation
            1. 7.3.5.1.2.1 Max Power Point Tracking (MPPT) for Solar PV Panel
      6. 7.3.6 Reverse Mode Power Direction
        1. 7.3.6.1 Auto Reverse Mode
      7. 7.3.7 Integrated 16-Bit ADC for Monitoring
      8. 7.3.8 Status Outputs (PG, STAT1, STAT2, and INT)
        1. 7.3.8.1 Power Good Indicator (PG)
        2. 7.3.8.2 Charging Status Indicator (STAT1, STAT2 Pins)
        3. 7.3.8.3 Interrupt to Host (INT)
      9. 7.3.9 Serial Interface
        1. 7.3.9.1 Data Validity
        2. 7.3.9.2 START and STOP Conditions
        3. 7.3.9.3 Byte Format
        4. 7.3.9.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 7.3.9.5 Target Address and Data Direction Bit
        6. 7.3.9.6 Single Write and Read
        7. 7.3.9.7 Multi-Write and Multi-Read
    4. 7.4 Device Functional Modes
      1. 7.4.1 Host Mode and Default Mode
      2. 7.4.2 Register Bit Reset
    5. 7.5 BQ25751 Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Application (Standalone)
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 ACUV / ACOV Input Voltage Operating Window Programming
          2. 8.2.1.2.2 Charge Voltage Selection
          3. 8.2.1.2.3 Switching Frequency Selection
          4. 8.2.1.2.4 Inductor Selection
          5. 8.2.1.2.5 Input (VAC / SYS) Capacitor
          6. 8.2.1.2.6 Output (VBAT) Capacitor
          7. 8.2.1.2.7 Sense Resistor (RAC_SNS and RBAT_SNS) and Current Programming
          8. 8.2.1.2.8 ACFETs and BATFETs Selection
          9. 8.2.1.2.9 Converter Fast Transient Response
        3. 8.2.1.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Packaging Information
    2. 13.2 Tape and Reel Information
    3. 13.3 Mechanical Data

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RRV|36
散热焊盘机械数据 (封装 | 引脚)
8.2.1.2.8 ACFETs and BATFETs Selection

External N-channel MOSFETs are used for power path transfer. Those on the VAC side are called ACFETs and those on the VBAT side are called BATFETs.

The proper trade off for selecting these MOSFETs depends on the SOA characteristics. All FETs follow the same trend hence the same FET can be used at all places for regular operation and power path handover. It is essential to select a MOSFET that offers close to 10A Drain Current at 30V VDS at DC and also has the capability to offer 100A Drain Current at 30V VDS at 10 μs without breaking. Furthermore, the SOA characteristics should be such that the maximum junction temperature should be at least 125°C. The FETs selected for this application are AON6276 and can withstand a voltage swing of up-to 30V from VAC to VBAT and vice-versa.

Even though rugged high SOA MOSFETs are being used, it is still essential to limit the maximum amount of current that is allowed to flow from the battery to the system load. This is done by setting the power path overcurrent protection to a limit of 15A. This means that the maximum load for which we can achieve a successful power path transfer from VAC to VBAT is 15A. Furthermore, it should be noted that in cases where VAC > VBAT, the ACUV should be set to a value between VAC and VBAT. For cases where VBAT > VAC, the ACUV should be set just below VAC.

In some special cases, the battery has to be plugged into the system suddenly at a very high voltage which causes a large inrush current. This is called a battery hot plug. In such an application is desired, our recommendation is to replace the BATFETs with NTMFSC4D2N10MC FETs. These FETs have a higher threshold voltage which is desirable for hot plug applications. For hot plug applications, R9 and C36 on the EVM must be populated with a 10Ω resistor and 10nF capacitor respectively. This prevents a sudden rise and shoot through of the current and protects the FETs from being damaged.