SLUSE53 December   2024 BQ25751

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics (BQ25751)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Power-On-Reset
      2. 7.3.2 Device Power-Up From Battery Without Input Source
      3. 7.3.3 Device Power Up from Input Source
        1. 7.3.3.1 VAC Operating Window Programming (ACUV and ACOV)
        2. 7.3.3.2 REGN Regulator (REGN LDO)
        3. 7.3.3.3 Switching Frequency and Synchronization (FSW_SYNC)
        4. 7.3.3.4 Device HIZ Mode
      4. 7.3.4 Battery Charging Management
        1. 7.3.4.1 Autonomous Charging Cycle
          1. 7.3.4.1.1 Charge Current Programming (ICHG pin and ICHG_REG)
        2. 7.3.4.2 Lead Acid Battery Charging Profile
        3. 7.3.4.3 Absorb Charge to Float Charge for Lead-Acid
        4. 7.3.4.4 CV Timer
        5. 7.3.4.5 Thermistor Qualification
          1. 7.3.4.5.1 Temperature Compensated Charging
          2. 7.3.4.5.2 Cold/Hot Temperature Window in Reverse Mode
      5. 7.3.5 Power Path Management
        1. 7.3.5.1 Dynamic Power Management: Input Voltage and Input Current Regulation
          1. 7.3.5.1.1 Input Current Regulation
            1. 7.3.5.1.1.1 ILIM_HIZ Pin
          2. 7.3.5.1.2 Input Voltage Regulation
            1. 7.3.5.1.2.1 Max Power Point Tracking (MPPT) for Solar PV Panel
      6. 7.3.6 Reverse Mode Power Direction
        1. 7.3.6.1 Auto Reverse Mode
      7. 7.3.7 Integrated 16-Bit ADC for Monitoring
      8. 7.3.8 Status Outputs (PG, STAT1, STAT2, and INT)
        1. 7.3.8.1 Power Good Indicator (PG)
        2. 7.3.8.2 Charging Status Indicator (STAT1, STAT2 Pins)
        3. 7.3.8.3 Interrupt to Host (INT)
      9. 7.3.9 Serial Interface
        1. 7.3.9.1 Data Validity
        2. 7.3.9.2 START and STOP Conditions
        3. 7.3.9.3 Byte Format
        4. 7.3.9.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 7.3.9.5 Target Address and Data Direction Bit
        6. 7.3.9.6 Single Write and Read
        7. 7.3.9.7 Multi-Write and Multi-Read
    4. 7.4 Device Functional Modes
      1. 7.4.1 Host Mode and Default Mode
      2. 7.4.2 Register Bit Reset
    5. 7.5 BQ25751 Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Application (Standalone)
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 ACUV / ACOV Input Voltage Operating Window Programming
          2. 8.2.1.2.2 Charge Voltage Selection
          3. 8.2.1.2.3 Switching Frequency Selection
          4. 8.2.1.2.4 Inductor Selection
          5. 8.2.1.2.5 Input (VAC / SYS) Capacitor
          6. 8.2.1.2.6 Output (VBAT) Capacitor
          7. 8.2.1.2.7 Sense Resistor (RAC_SNS and RBAT_SNS) and Current Programming
          8. 8.2.1.2.8 ACFETs and BATFETs Selection
          9. 8.2.1.2.9 Converter Fast Transient Response
        3. 8.2.1.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Packaging Information
    2. 13.2 Tape and Reel Information
    3. 13.3 Mechanical Data

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RRV|36
散热焊盘机械数据 (封装 | 引脚)

7.3.4.3 Absorb Charge to Float Charge for Lead-Acid

The device uses the termination comparator to transition from absorb charge to float charge when charging a lead-acid battery. The threshold is reached when the battery voltage is in absorb phase regulation, and the current is below termination current. The termination current threshold is controlled by the lower option between the 10% of ICHG pin setting or the ITERM register setting.

In standalone applications using the ICHG pin to program the current, the termination threshold is set at 10% of the ICHG pin value (10A ICHG pin programming results in 1A termination). The termination is detected when the ICHG pin voltage drops below VREF_ITERM.

In host-controlled applications, the termination current can be programmed using the ITERM register bits. The ICHG pin can still be used to set a hardware limit for the charge current.

When termination occurs, the device reduces battery voltage to float charge regulation, the status register CHRG_STAT is set to 101, and an INT pulse is asserted to the host. Termination is temporarily disabled when the charger device is in input current, or input voltage regulation. Termination can be permanently disabled by writing 0 to EN_TERM prior to charge termination. In this case, the device can still exit the absorb phase voltage when the CV timer expires. Refer to Section 7.3.4.4 for more details.

At low termination currents, due to the comparator offset, the actual termination current may be significantly than the termination target. In order to compensate for comparator offset, a programmable top-off timer (default disabled) can be applied after termination is detected. The top-off timer will follow safety timer constraints, such that if safety timer is suspended, so will the top-off timer. Similarly, if safety timer is doubled, so will the top-off timer. CHRG_STAT reports whether the top off timer is active via the 110 code. Once the Top-Off timer expires, the CHRG_STAT register is set to 111 and an INT pulse is asserted to the host. Note that if CV timer expires while device is in Top-Off timer mode, the device will immediately transition from absorb charge voltage to float charge voltage.