产品详细信息

Number of channels (#) 1 Isolation rating (Vrms) 3750 Power switch IGBT, SiCFET Peak output current (A) 30 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 5250 DIN V VDE V 0884-10 working voltage (Vpk) 1000 Output VCC/VDD (Max) (V) 30 Output VCC/VDD (Min) (V) 15 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 150 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12
Number of channels (#) 1 Isolation rating (Vrms) 3750 Power switch IGBT, SiCFET Peak output current (A) 30 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 5250 DIN V VDE V 0884-10 working voltage (Vpk) 1000 Output VCC/VDD (Max) (V) 30 Output VCC/VDD (Min) (V) 15 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 150 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12
SSOP (DWJ) 36 96 mm² 12.8 x 7.5
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Safety-related certifications:
    • 3750– VRMS isolation for 1 minute per UL1577 (planned)
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 0: –40°C to 125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4b
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Safety-related certifications:
    • 3750– VRMS isolation for 1 minute per UL1577 (planned)
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 0: –40°C to 125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4b

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

下载
Information

More information

The UCC5870-Q1 functional safety manual, report, analysis report and FIT Rate, FMD and Pin FMA report are available. Request now

技术文档

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类型 标题 下载最新的英文版本 日期
* 数据表 具有实时功能的 UCC5870-Q1 隔离式 IGBT、SiC MOSFET 栅极驱动器 数据表 (Rev. C) 2021年 9月 1日
应用手册 The Use and Benefits of Ferrite Beads in Bate Drive Circuits 2021年 12月 16日
证书 UL 1577 Certificate of Compliance 2021年 10月 22日
技术文章 Driving next-generation EV systems with a distributed architecture 2021年 9月 27日
白皮书 高性能集成式动力总成解决方案:电动汽车普及的关键 (Rev. A) 2021年 4月 21日
白皮书 A High-Performance, Combo Box Powertrain Solution: the Key to EV Adoption (Rev. A) 2021年 4月 15日
白皮书 A High-Performance, Combo Box Powertrain Solution: the Key to EV Adoption. 2021年 4月 14日
白皮书 A High-Performance, Combo Box Powertrain Solution: the Key to EV Adoption... 2021年 4月 14日
更多文献资料 Getting started with programming functional safety compliant gate drivers for EV 2021年 3月 23日
更多文献资料 Protecting Power Devices in Electric Vehicle Applications 2021年 3月 23日
证书 UCC5870QEVM-045 EU Declaration of Conformity (DoC) 2021年 2月 22日
应用手册 HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers (Rev. A) 2020年 6月 26日
用户指南 UCC5870QEVM-045 User's Guide 2020年 2月 4日
用户指南 UCC5870-Q1 Evaluaiton Module User's Guide 2019年 10月 1日
技术文章 How to achieve higher system robustness in DC drives, part 3: minimum input pulse 2018年 9月 19日
技术文章 How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 2018年 5月 30日
技术文章 Boosting efficiency for your solar inverter designs 2018年 5月 24日

设计与开发

有关其他条款或所需资源,请点击下面的任何链接来查看详情页面。

评估板

UCC5870QDWJEVM-026 — UCC5870-Q1 functional safety compliant 15-A isolated IGBT/SiC MOSFET gate driver evaluation module

UCC5870-Q1 评估模块适用于评估 TI 的 UCC5870-Q1 这款具有高级保护功能的 15A 隔离式单通道栅极驱动器。此驱动器专用于驱动 EV/HEV 应用中的大功率 SiC MOSFET 和 IGBT。包含多种保护功能,如有源米勒钳位、DESAT 检测、分流电流感应支持、软关断、VCE 过压保护、栅极驱动器电源 UVLO 和 OVLO 保护、温度监测和热关断以及栅极监测等,适用于具有高可靠性要求的系统。该驱动器还通过串行外设接口 (SPI) 集成了先进的诊断、保护和监控功能。
评估板

UCC5870QEVM-045 — UCC5870-Q1 符合功能安全标准的 15A 隔离式 IGBT/SiC MOSFET 栅极驱动器三相 EVM

UCC5870-Q1 三相评估模块 (EVM) 适用于评估 TI 这款具有高级保护功能的 15A 隔离式单通道栅极驱动器。此 EVM 专用于驱动 EV/HEV 应用中的大功率 SiC MOSFET 和 IGBT。这款三相 EVM 可用于调试软件以适应驱动器的串行外设接口 (SPI),还可评估驱动器先进的诊断、保护和监控功能。

现货
数量限制: 5
评估模块 (EVM) 的 GUI

UCC5870-Q1 EVM GUI Software (Rev. A)

SLUC700A.ZIP (31568 KB)
仿真模型

Simplis functional model for UCC5870-Q1

SLUM763.ZIP (33 KB) - SIMPLIS Model
仿真工具

PSPICE-FOR-TI — PSPICE® for TI design and simulation tool

PSpice® for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence® 的模拟分析引擎。PSpice for TI 可免费使用,包括业内超大的模型库之一,涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

借助 PSpice for TI 的设计和仿真环境及其内置的模型库,您可对复杂的混合信号设计进行仿真。创建完整的终端设备设计和原型解决方案,然后再进行布局和制造,可缩短产品上市时间并降低开发成本。 

在 PSpice for TI 设计和仿真工具中,您可以搜索 TI (...)
计算工具

UCC5870-Q1 XL Calculator Tool

SLURAZ3.ZIP (559 KB)
参考设计

TIDM-02009 — 经过 ASIL D 等级功能安全认证的高速牵引和双向直流/直流转换参考设计

此参考设计演示了如何通过一个 TMS320F28388D 实时 C2000™ MCU 控制 HEV/EV 牵引逆变器和双向直流/直流转换器。牵引控制利用基于软件的旋转变压器转数字转换器 (RDC),使电机转速高达 20,000RPM。直流/直流转换器结合了峰值电流模式控制 (PCMC) 技术、相移全桥 (PSFB) 拓扑以及同步整流 (SR) 机制。牵引逆变器级采用碳化硅 (SiC) 功率级,由 UCC5870-Q1 智能栅极驱动器驱动。利用比较器子系统 (CMPSS) 中先进的 PWM 模块和内置斜坡补偿功能,可生成 PCMC 波形。该系统基于 ASIL (...)
封装 引脚 下载
SSOP (DWJ) 36 了解详情

订购与质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/FIT 估算
  • 材料成分
  • 认证摘要
  • 持续可靠性监测

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