SPRK066 October   2025 F28377D-SEP

 

  1.   1
  2.   F28377D-SEP Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects (SEE)
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Depth, Range, and LETEFF Calculation
  9. 6Test Setup and Procedures
  10. 7Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8Single-Event Transients (SET)
    1. 8.1 GPIO Testing and Results
      1. 8.1.1 GPIO Test Setup
      2. 8.1.2 GPIO SET Analysis
      3. 8.1.3 GPIO SET Summary
    2. 8.2 ePWM Testing and Results
      1. 8.2.1 ePWM Testing Setup
      2. 8.2.2 ePWM SET Analysis
      3. 8.2.3 ePWM SET Summary
    3. 8.3 SRAM Testing and Results
      1. 8.3.1 SRAM Test Setup
      2. 8.3.2 SRAM SET Summary
    4. 8.4 Flash Memory Testing and Results
      1. 8.4.1 Flash Test Setup
      2. 8.4.2 Flash SET Summary
  12. 9Summary
  13.   A Total Ionizing Dose from SEE Experiments
  14.   B References

1 Introduction

The F28377D-SEP is a powerful 32-bit floating-point microcontroller unit (MCU) designed for advanced closed-loop control applications such as industrial motor drives; solar inverters and digital power; electrical vehicles and transportation; and sensing and signal processing.

Performance analog and control peripherals are also integrated on the F28377D MCU to further enable system consolidation. Four independent 16-bit ADCs provide precise and efficient management of multiple analog signals, which ultimately boosts system throughput. The new sigma-delta filter module (SDFM) works in conjunction with the sigma-delta modulator to enable isolated current shunt measurements. The Comparator Subsystem (CMPSS) with windowed comparators allows for protection of power stages when current limit conditions are exceeded or not met. Other analog and control peripherals include DACs, PWMs, eCAPs, eQEPs, and other peripherals.

While this document details the performance of the F28377D-SEP while exposed to heavy ions, there are many features on the device that can be used to mitigate the occurrence of transients due to radiation. Features like ECC and Parity on the memories, watchdog timers to detect deviations in code execution, interrupts to detect overflow events, are just a few of the HW mechanisms on-chip that help the F28377D-SEP robustness in a radiation environment. The Functional Safety Manual for TMS320F2837xD, TMS320F2837xS, and TMS320F2807x is an excellent resource to go into more detail on all the available resources on the device to achieve a more robust system.

The device is offered in a 176-pin plastic package. General device information and test conditions are listed in the overview information table. For more detailed technical specifications, user-guides, and application notes please go to device product page.

Table 1-1 Overview Information
DESCRIPTION(1)DEVICE INFORMATION
TI Part NumberF28377D-SEP
Orderable Part Number

F28377DPTPSEP

VID/SMD Number

V62/25638

Device Function32-bit Dual-Core Real-Time Microcontroller
TechnologyF021 (65nm Flash CMOS)
Exposure FacilityRadiation Effects Facility, Cyclotron Institute, Texas A&M University (25MeV/nucleon)
Heavy Ion Fluence per Run1.00 × 106 – 1.00 × 107 ions/cm2
Irradiation Temperature25°C (for SET testing), and 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.