SPRK066 October   2025 F28377D-SEP

 

  1.   1
  2.   F28377D-SEP Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects (SEE)
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Depth, Range, and LETEFF Calculation
  9. 6Test Setup and Procedures
  10. 7Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8Single-Event Transients (SET)
    1. 8.1 GPIO Testing and Results
      1. 8.1.1 GPIO Test Setup
      2. 8.1.2 GPIO SET Analysis
      3. 8.1.3 GPIO SET Summary
    2. 8.2 ePWM Testing and Results
      1. 8.2.1 ePWM Testing Setup
      2. 8.2.2 ePWM SET Analysis
      3. 8.2.3 ePWM SET Summary
    3. 8.3 SRAM Testing and Results
      1. 8.3.1 SRAM Test Setup
      2. 8.3.2 SRAM SET Summary
    4. 8.4 Flash Memory Testing and Results
      1. 8.4.1 Flash Test Setup
      2. 8.4.2 Flash SET Summary
  12. 9Summary
  13.   A Total Ionizing Dose from SEE Experiments
  14.   B References

9 Summary

The purpose of this study was to characterize the effect of heavy-ion irradiation on the single-event effect (SEE) performance of the F28377D-SEP 32-bit real-time control MCU. Heavy-ions with LETEFF = 8 to 45MeV·cm2/mg were used for the SEE characterization campaign. Flux of ≈104 to 105 ions/cm2 ·s and fluences of ≈106 to 107 ions/cm2 per run were used for the characterization. The SEE results demonstrated that the F28377D-SEP is free of destructive SEL LETEFF = 45MeV·cm2/mg and across the full electrical specifications. Transients at LETEFF = 8 to 45MeV·cm2 /mg are presented and discussed.