SPRK066 October   2025 F28377D-SEP

 

  1.   1
  2.   F28377D-SEP Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects (SEE)
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Depth, Range, and LETEFF Calculation
  9. 6Test Setup and Procedures
  10. 7Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8Single-Event Transients (SET)
    1. 8.1 GPIO Testing and Results
      1. 8.1.1 GPIO Test Setup
      2. 8.1.2 GPIO SET Analysis
      3. 8.1.3 GPIO SET Summary
    2. 8.2 ePWM Testing and Results
      1. 8.2.1 ePWM Testing Setup
      2. 8.2.2 ePWM SET Analysis
      3. 8.2.3 ePWM SET Summary
    3. 8.3 SRAM Testing and Results
      1. 8.3.1 SRAM Test Setup
      2. 8.3.2 SRAM SET Summary
    4. 8.4 Flash Memory Testing and Results
      1. 8.4.1 Flash Test Setup
      2. 8.4.2 Flash SET Summary
  12. 9Summary
  13.   A Total Ionizing Dose from SEE Experiments
  14.   B References

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the F28377D-SEP. Heavy-ions with LETEFF of 45MeV·cm2 /mg were used to irradiate three pre-production devices. Flux of ≅ 105ions×cm2/s and fluence of ≅107 ions/cm2for SEL and Flux of ≅ 104ions×cm2/s fluence of ≅106 ions/cm2 for SET per run were used for the characterization. The results demonstrated that the F28377D-SEP is SEL-free up to 45MeV·cm2/mg at T = 125°C in addition to effects of SET at T = 25°C. SET transients performance was monitored during checking for excursions of >|3%| from the nominal output on independent GPIO outputs that were controlled by CPU1 and CPU2 respectively while code is executing during both SEL and SET testing.