SPRK066 October   2025 F28377D-SEP

 

  1.   1
  2.   F28377D-SEP Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects (SEE)
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Depth, Range, and LETEFF Calculation
  9. 6Test Setup and Procedures
  10. 7Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8Single-Event Transients (SET)
    1. 8.1 GPIO Testing and Results
      1. 8.1.1 GPIO Test Setup
      2. 8.1.2 GPIO SET Analysis
      3. 8.1.3 GPIO SET Summary
    2. 8.2 ePWM Testing and Results
      1. 8.2.1 ePWM Testing Setup
      2. 8.2.2 ePWM SET Analysis
      3. 8.2.3 ePWM SET Summary
    3. 8.3 SRAM Testing and Results
      1. 8.3.1 SRAM Test Setup
      2. 8.3.2 SRAM SET Summary
    4. 8.4 Flash Memory Testing and Results
      1. 8.4.1 Flash Test Setup
      2. 8.4.2 Flash SET Summary
  12. 9Summary
  13.   A Total Ionizing Dose from SEE Experiments
  14.   B References

8.4.2 Flash SET Summary

Flash SET summary is shown in Table 8-9. For flash memory only the Silver Ion (45MeV) was tested thus far. There were no transients/upsets observed during flash testing. As such the cross section has been calculated using a 95% confidence interval and Mean Fluence To Fail approach.

Table 8-9 Flash Test Summary
Test Number of Runs Avg Fluence(ions/cm2) Results Cross Section(Event Count/LETEFF1
Static zeros 3 1.00 E6 No read errors seen post ion beam 3.69 E-6
Static ones 3 1.00 E6 No read errors seen post ion beam 3.69 E-6
Dynamic writing zeros 3 1.00 E6 20 consecutive writes per run while under beam, no errors detected 3.69 E-6
Dynamic writing ones 3 1.00 E6 5 consecutive writes per run while under beam, no errors detected 3.69 E-6
Dynamic reading zeros 3 1.00 E6 1500 reads of both sectors while under beam, no errors detected 3.69 E-6
Dynamic reading ones 3 1.00 E6 1500 reads of both sectors while under beam, no errors detected 3.69 E-6
  1. Since there were no upsets observed the cross section for this section is calculated as a Mean Fluence To Fail (MFTF) at 95% confidence interval based on one device under test. See Single-Event Effects Confidence Interval Calculations for more information on this calculation.