ZHCSO86B december   2022  – july 2023 LM74900-Q1 , LM74910-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 开关特性
    7. 7.7 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Charge Pump
      2. 9.3.2 Dual Gate Control (DGATE, HGATE)
        1. 9.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 9.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 9.3.3 Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
        1. 9.3.3.1 Pulse Overload Protection, Circuit Breaker
        2. 9.3.3.2 Overcurrent Protection With Latch-Off
        3. 9.3.3.3 Short Circuit Protection (ISCP)
        4. 9.3.3.4 Analog Current Monitor Output (IMON)
      4. 9.3.4 Undervoltage Protection, Overvoltage Protection, and Battery Voltage Sensing (UVLO, OV, SW)
      5. 9.3.5 Low IQ SLEEP Mode (SLEEP)
      6. 9.3.6 Ultra Low IQ Shutdown (EN)
  11. 10Applications and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical 12-V Reverse Battery Protection Application
      1. 10.2.1 Design Requirements for 12-V Battery Protection
      2. 10.2.2 Automotive Reverse Battery Protection
        1. 10.2.2.1 Input Transient Protection: ISO 7637-2 Pulse 1
        2. 10.2.2.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
        3. 10.2.2.3 Input Micro-Short Protection: LV124 E-10
      3. 10.2.3 Detailed Design Procedure
        1. 10.2.3.1 Design Considerations
        2. 10.2.3.2 Charge Pump Capacitance VCAP
        3. 10.2.3.3 Input and Output Capacitance
        4. 10.2.3.4 Hold-Up Capacitance
        5. 10.2.3.5 Selection of Current Sense Resistor, RSNS
        6. 10.2.3.6 Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
        7. 10.2.3.7 Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
        8. 10.2.3.8 Overvoltage Protection and Battery Monitor
      4. 10.2.4 MOSFET Selection: Blocking MOSFET Q1
      5. 10.2.5 MOSFET Selection: Hot-Swap MOSFET Q2
      6. 10.2.6 TVS Selection
      7. 10.2.7 Application Curves
    3. 10.3 Addressing Automotive Input Reverse Battery Protection Topologies With LM749x0-Q1
    4. 10.4 Power Supply Recommendations
      1. 10.4.1 Transient Protection
      2. 10.4.2 TVS Selection for 12-V Battery Systems
    5. 10.5 Layout
      1. 10.5.1 Layout Guidelines
  12. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 静电放电警告
    5. 11.5 术语表
  13. 12Mechanical, Packaging, and Orderable Information

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10.2.2 Automotive Reverse Battery Protection

The LM749x0-Q1 feature two separate gate control and driver outputs i.e DGATE and HGATE to drive back to back N-channel MOSFETs. This enables LM749x0-Q1 to provide comprehensive immunity with robust system protection during various automotive transient tests as per ISO 7637-2 and ISO 16750-2 standard as well as other automotive OEM standards. For more information, see the Automotive EMC-compliant reverse-battery protection with ideal-diode controllers article.

LM749x0-Q1 gate drive output DGATE controls MOSFET Q1 to provide reverse battery protection and true reverse current blocking functionality. HGATE controls MOSFET Q2 to turn off the power path during input overvoltage condition. Resistor network R1, R2 and R3, R4 connected from SW pin to ground can be configured for undervoltage and overvoltage protection. Bi-directional TVS D1 clamps the automotive transient input voltages on the 12-V battery, both positive and negative transients, to voltage levels safe for MOSFET Q1 and LM749x0-Q1.

Fast reverse current blocking response and quick reverse recovery enables LM749x0-Q1 to turn ON/OFF MOSFET Q1 during AC super imposed input specified by ISO 16750-2 and LV124 E-06 and provide active rectification of the AC input superimposed on DC battery voltage. Fast reverse current blocking response of LM749x0-Q1 helps to turn off MOSFET Q1 during negative transients inputs such as –150-V 2-ms Pulse 1 specified in ISO 7637-2 and input micro short conditions such as LV124 E-10 test.