LMG3522R030
- 650V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- LMG3526R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
- LMG3527R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
- Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance
The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3527R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
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技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LMG352xR030 650 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B) | PDF | HTML | 2025/1/23 | ||
| Product overview | HVDC QFN-Packaged GaN Power Devices | PDF | HTML | 2026/3/31 | |||
| 應用說明 | Design Consideration of 3-Level Flying Capacitor Converters for Three-Phase AC/DC Applications | PDF | HTML | 2026/1/12 | |||
| 應用說明 | Implementation of Single-Phase Off-Grid Inverter With Digital Control Using PLECS Simulation | PDF | HTML | 2024/4/15 | |||
| 技術文章 | 高轉換速率的負載暫態測試 | PDF | HTML | Download English Version | PDF | HTML | 2024/3/20 | |
| 類比設計期刊 | 以高密度、GaN 最佳化 PFC 轉換器解決 AC 壓降復原問題 | PDF | HTML | Download English Version | PDF | HTML | 2024/3/18 | |
| 技術文章 | The benefits of GaN for battery test systems | PDF | HTML | 2022/10/7 |
設計與開發
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許多 TI 參考設計包含 LMG3522R030
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RQS) | 52 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。