LMG3411R150
- TI GaN process qualified through accelerated reliability in-application hard-switching profiles
- Enables high-density power conversion designs
- Superior system performance over cascode or stand-alone GaN FETs
- Low inductance 8 mm × 8 mm QFN package for ease of design and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- Only +12 V of unregulated supply needed
- Integrated gate driver
- Zero common source inductance
- 20-ns propagation delay for high-frequency design
- Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
- 25-V/ns to 100-V/ns adjustable slew rate
- Robust protection
- Requires no external protection components
- Overcurrent protection with <100 ns response
- Greater than 150-V/ns slew rate immunity
- Transient overvoltage immunity
- Overtemperature protection
- Undervoltage lockout (UVLO) protection on all supply rails
- Device Options:
- LMG3410R150: Latched overcurrent protection
- LMG3411R150: Cycle-by-cycle overcurrent proection
The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) | PDF | HTML | 2020/2/13 | ||
| Product overview | HVDC QFN-Packaged GaN Power Devices | PDF | HTML | 2026/3/31 | |||
| 白皮書 | Achieving GaN Products With Lifetime Reliability | PDF | HTML | 2021/6/2 | |||
| 白皮書 | 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 | Download English Version | 2021/3/18 | |||
| 更多文件說明 | A Generalized Approach to Determine the Switching Lifetime of a GaN FET | 2020/10/20 | ||||
| 類比設計期刊 | Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC | 2020/9/22 | ||||
| 應用說明 | Thermal Considerations for Designing a GaN Power Stage (Rev. B) | 2020/8/4 | ||||
| 更多文件說明 | GaN FET Reliability to Power-line Surges Under Use-conditions | 2019/3/25 | ||||
| 應用說明 | Third quadrant operation of GaN | 2019/2/25 | ||||
| 技術文章 | Searching for the newest innovations in power? Find them at APEC | PDF | HTML | 2019/2/9 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
LMG34XX-BB-EVM — 適用於 LMG341x 系列的 LMG34xx GaN 系統級評估主機板
LMG34XX-BB-EVM 是一款易於使用的分接板，可當作同步降壓轉換器配置任何 LMG341x 半橋電路板，例如 LMG3410-HB-EVM。透過提供功率級、偏壓電源和邏輯電路，此 EVM 可快速測量 GaN 裝置切換。此 EVM 能夠提供高達 8 A 的輸出電流，運用適當的溫度管理 (強制空氣、低頻率運作等)，確保不超過最高運作溫度。EVM 屬於開迴路電路板，不適合執行瞬態量測。
只需要單脈衝寬度調變輸入，具有互補脈衝寬度調變訊號，和板上產生的對應失效時間。使用具有短接地彈簧的示波器探針，提供探針點來測量主要邏輯和功率級波形。
LMG3411EVM-031 — 具有逐週期過電流保護半橋子卡的 LMG3411R150 600-V 150-mΩ GaN
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
PMP22538 — 60-W GaN PFC 返馳參考設計
TIDA-00915 — 適用於整合型驅動器的三相、1.25kW、200V AC 小型 GaN 逆變器參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RWH) | 32 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。