計算工具
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
LMG3522R050
- 650V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 3.6MHz switching frequency
- 15V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- LMG3526R050 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
- Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance
The LMG352xR050 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG352xR050 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 15V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R050 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
技術文件
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檢視所有 1 | 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | LMG352xR050 650 V 50 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. A) | PDF | HTML | 2024年 5月 23日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
開發板
LMG342X-BB-EVM — LMG342x 評估模組
LMG342X-BB-EVM 是一款易於使用的分接板，可當作同步降壓轉換器配置任何 LMG342xR0x0 半橋電路板，例如 LMG3422EVM-043。透過提供功率級、偏壓電源和邏輯電路，此評估模組 (EVM) 可快速測量氮化鎵 (GaN) 裝置切換。此 EVM 能夠提供高達 12A 的輸出電流，運用適當的溫度管理 (強制空氣、低頻運作等)，確保不超過最高操作溫度。EVM 屬於開迴路電路板，不適合執行瞬態量測。
只需要單脈衝寬度調變輸入，具有互補脈衝寬度調變訊號，和板上產生的對應失效時間。使用具有短接地彈簧的示波器探針，提供探針點來測量主要邏輯和功率級波形。
子卡
LMG3522EVM-042 — 配備整合式驅動器子卡的 LMG3522R030-Q1 車用 650-V 30-mΩ GaN FET
LMG3522EVM-042 可配置半橋中兩個 LMG3522R030 GaN FET，並具備逐週期過電流防護、鎖存短路防護功能和所有必要輔助周邊電路。此 EVM 設計旨在與較大的系統配合使用。
使用指南: PDF
參考設計
TIDA-010933 — GaN 型 1.6kW、雙向微型逆變器參考設計
此參考設計展示了一款具有儲能功能的四輸入雙向 1.6kW GaN 型微型逆變器。
Design guide: PDF
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RQS) | 52 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。