計算工具
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
LMG3427R030
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2.2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
- LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
技術文件
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檢視所有 1 | 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | LMG342xR030 600 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. F) | PDF | HTML | 2024年 8月 28日 |
設計與開發
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子卡
LMG3422EVM-043 — LMG3422R030 600-V 30-mΩ 半橋子板
LMG3422EVM-043 於半橋配置兩個 LMG3422R030 GaN FET，具備鎖存過電流防護和所有必要輔助周邊設備電路。此 EVM 設計旨在與較大的系統配合使用。
參考設計
PMP23537 — 3.6kW CCM-TCM 多模控制圖騰柱免橋接 PFC 參考設計
此參考設計為 3.6kW、單相、圖騰柱免橋接功率因數校正 (PFC) 轉換器，專為模組化硬體系統通用備援電源供應器 (M-CRPS) 伺服器所設計。PFC 在電感器電流較高的 AC 峰值區以連續傳導模式 (CCM) 運作，並在電感器電流較低的 AC 低谷區以三角傳導模式 (TCM) 及零電壓切換 (ZVS) 運作，以兼顧高效率與高功率密度。功率級之後配備了一個小型升壓轉換器，有助於縮減大型電容器的尺寸。此設計亦包括準確度為 0.5% 的電表功能，並使用 AMC1306 做為電流感測裝置，因此不再需要外部電源量測 IC。此設計還提供了使用 TMCS1133 (...)
Test report: PDF
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RQZ) | 54 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。