LMG2610
- 650-V GaN power-FET half bridge
- 170-mΩ low-side and 248-mΩ high-side GaN FETs
- Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control
- Current-sense emulation with high-bandwidth and high accuracy
- Low-side / high-side gate-drive interlock
- High-side gate-drive signal level shifter
- Smart-switched bootstrap diode function
- High-side start up : < 8 us
- Low-side / high-side cycle-by-cycle over-current protection
- Over-temperature protection with FLT pin reporting
- AUX idle quiescent current: 240 µA
- AUX standby quiescent current: 50 µA
- BST idle quiescent current: 60 µA
- Maximum supply and input logic pin voltage: 26 V
- 9x7 mm QFN package with dual thermal pads
The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.
The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.
The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2610 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over temperature shut down.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters datasheet (Rev. A) | PDF | HTML | 2022/12/12 | ||
| Product overview | HVDC QFN-Packaged GaN Power Devices | PDF | HTML | 2026/3/31 | |||
| 應用說明 | Enabling Small-Form-Factor AC/DC Adapters With use of Integrated GaN Technology | PDF | HTML | 2023/3/27 |
設計與開發
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UCC28782EVM-030 — 具 LMG2610 整合式 GaN 半橋式的 UCC28782 主動鉗位返馳式轉換器 65-W USB-C PD EVM
UCC28782EVM-030 使用 UCC28782 主動鉗位返馳控制器展現 65-W USB Type-C™ 離線適配器的高效率和高密度。輸入支援通用 90 Vac 至 264 Vac，單輸出在最大電流 3-A 時可設爲 5 V、9 V 和 15 V，最大電流 3.25-A 時則為 20 V，可透過 USB PD 介面控制器進行調整。250-kHz 額定的高頻率操作可縮小解決方案尺寸，多模式操作則可維持高效率。LMG2610 整合了高壓側與低壓側 FET、閘極驅動器、高壓側位準移位器，並提供無耗損電流感測模擬。輸出則採用同步整流以提升效率。
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
SNOR036 — LMG2610 Active-Clamp Flyback Power Stage Design Calculator
PMP22244 — 具備 GaN 的 60-W USB Type-C® 高密度主動箝位返馳參考設計
此參考設計為高密度、60-W 115-VAC 輸入電源供應，適合採用 UCC28782 主動箝位返馳控制器、LMG2610 整合式 GaN 半橋和 UCC24612 同步整流器驅動器的 USB Type-C 應用。最大功率額定值在 20-V 或 15-V 輸出時為 60 W，在 9-V 輸出時為 54 W，在 5-V 輸出時則為 30 W。此設計的峰值效率可達 94.8%。設計尺寸為 1.5 英寸 x 3.35 英寸 x 1 英寸 (37.5 毫米 x 85 毫米 x 25 毫米)。
PMP23146 — 適用伺服器輔助電源且具 GaN 的 45-W 高功率密度主動箝位返馳參考設計
TIDA-050074 — 140-W GaN 式 USB PD3.1 USB-C® 變壓器參考設計
此參考設計是基於氮化鎵 (GaN) 的 140W AC-DC 電源，具有高效率和功率密度。支援廣泛輸入 (90VAC 至 264VAC) 和輸出 (5V 至 28V) 電壓。它專為應用而設計，例如用於 USB PD3.1 的變壓器設計和用於電動工具的充電器。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RRG) | 40 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。