LMG3411R070
- TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
- Enables High Density Power Conversion Designs
- Superior System Performance Over Cascode or Stand-alone GaN FETs
- Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
- Adjustable Drive Strength for Switching Performance and EMI Control
- Digital Fault Status Output Signal
- Only +12 V Unregulated Supply Needed
- Integrated Gate Driver
- Zero Common Source Inductance
- 20 ns Propagation Delay for MHz Operation
- Process-tuned Gate Bias Voltage for Reliability
- 25 to 100V/ns User Adjustable Slew Rate
- Robust Protection
- Requires No External Protection Components
- Over-current Protection with <100ns Response
- >150V/ns Slew Rate Immunity
- Transient Overvoltage Immunity
- Overtemperature Protection
- UVLO Protection on All Supply Rails
- Device Options:
- LMG3410R070: Latched Overcurrent Protection
- LMG3411R070: Cycle-by-cycle Overcurrent Protection
The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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LMG34XX-BB-EVM — 適用於 LMG341x 系列的 LMG34xx GaN 系統級評估主機板
LMG34XX-BB-EVM 是一款易於使用的分接板，可當作同步降壓轉換器配置任何 LMG341x 半橋電路板，例如 LMG3410-HB-EVM。透過提供功率級、偏壓電源和邏輯電路，此 EVM 可快速測量 GaN 裝置切換。此 EVM 能夠提供高達 8 A 的輸出電流，運用適當的溫度管理 (強制空氣、低頻率運作等)，確保不超過最高運作溫度。EVM 屬於開迴路電路板，不適合執行瞬態量測。
只需要單脈衝寬度調變輸入，具有互補脈衝寬度調變訊號，和板上產生的對應失效時間。使用具有短接地彈簧的示波器探針，提供探針點來測量主要邏輯和功率級波形。
LMG3410-HB-EVM — LMG3410R070 600V 70mΩ GaN 半橋子板
LMG3411EVM-029 — 具有逐週期過電流保護半橋子卡的 LMG3411R070 600-V 70-mΩ GaN
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
PMP20873 — 效率高達 99% 且基於 GaN 的 1kW CCM 圖騰柱功率因數校正 (PFC) 轉換器參考設計
PMP21309 — 具有 HV GaN FET 的 24-V/500-W 共振轉換器參考設計
PMP21842 — 具有 HV GaN FET 的 12V/500W 共振轉換器參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RWH) | 32 | Ultra Librarian |
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