LMG2650
- GaN power-FET half bridge: 650V
- Low-side and high-side GaN FETs: 95mΩ
- Integrated gate drivers with low propagation delays: < 100ns
- Programmable turn-on slew rate control
- Current-sense emulation with high-bandwidth and high accuracy
- Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
- Low-side (INL) and high-side (INH) gate-drive interlock
- High-side (INH) gate-drive signal level shifter
- Smart-switched bootstrap diode function
- High-side start up: <8µs
- Low-side and high-side cycle-by-cycle overcurrent protection
- Overtemperature protection
- AUX idle quiescent current: 250µA
- AUX standby quiescent current: 50µA
- BST idle quiescent current: 70µA
- 6mm × 8mm QFN package with dual thermal pads
The LMG2650 is a 650V 95mΩ GaN power-FET half bridge. The LMG2650 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap FET, and high-side gate-drive level shifter in a 6mm × 8mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to connect to PCB power ground.
Control the high-side GaN power FET with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2650 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down. Ultra low slew rate setting supports motor drive applications.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LMG2650 650V 95 mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation datasheet (Rev. B) | PDF | HTML | 2026/2/26 | ||
| 應用說明 | FAQs on UCC25661x | PDF | HTML | 2026/6/18 | |||
| Product overview | HVDC QFN-Packaged GaN Power Devices | PDF | HTML | 2026/3/31 |
設計與開發
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RFB) | 19 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。