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LMG2650

現行

具有整合式驅動器、防護和電流感測的 650V 95mΩ GaN 半橋

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產品規格表

LMG2650

現行
產品規格表 立即訂購

產品詳細資料

VDS (max) (V) 650 RDS(on) (mΩ) 95 ID (max) (A) 9.7 Features Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Integrated current sense, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 95 ID (max) (A) 9.7 Features Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Integrated current sense, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (RFB) 19 48 mm² 8 x 6
  • GaN power-FET half bridge: 650V
  • Low-side and high-side GaN FETs: 95mΩ
  • Integrated gate drivers with low propagation delays: < 100ns
  • Programmable turn-on slew rate control
  • Current-sense emulation with high-bandwidth and high accuracy
  • Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
  • Low-side (INL) and high-side (INH) gate-drive interlock
  • High-side (INH) gate-drive signal level shifter
  • Smart-switched bootstrap diode function
  • High-side start up: <8µs
  • Low-side and high-side cycle-by-cycle overcurrent protection
  • Overtemperature protection
  • AUX idle quiescent current: 250µA
  • AUX standby quiescent current: 50µA
  • BST idle quiescent current: 70µA
  • 6mm × 8mm QFN package with dual thermal pads
  • GaN power-FET half bridge: 650V
  • Low-side and high-side GaN FETs: 95mΩ
  • Integrated gate drivers with low propagation delays: < 100ns
  • Programmable turn-on slew rate control
  • Current-sense emulation with high-bandwidth and high accuracy
  • Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
  • Low-side (INL) and high-side (INH) gate-drive interlock
  • High-side (INH) gate-drive signal level shifter
  • Smart-switched bootstrap diode function
  • High-side start up: <8µs
  • Low-side and high-side cycle-by-cycle overcurrent protection
  • Overtemperature protection
  • AUX idle quiescent current: 250µA
  • AUX standby quiescent current: 50µA
  • BST idle quiescent current: 70µA
  • 6mm × 8mm QFN package with dual thermal pads

The LMG2650 is a 650V 95mΩ GaN power-FET half bridge. The LMG2650 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap FET, and high-side gate-drive level shifter in a 6mm × 8mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to connect to PCB power ground.

Control the high-side GaN power FET with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2650 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down. Ultra low slew rate setting supports motor drive applications.

The LMG2650 is a 650V 95mΩ GaN power-FET half bridge. The LMG2650 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap FET, and high-side gate-drive level shifter in a 6mm × 8mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to connect to PCB power ground.

Control the high-side GaN power FET with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2650 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down. Ultra low slew rate setting supports motor drive applications.
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* Data sheet LMG2650 650V 95 mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation datasheet (Rev. A) PDF | HTML 2025年 11月 10日

設計與開發

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子卡

LMG2650EVM-100 — LMG2650 半橋子卡評估模組

LMG2650EVM-100 專為提供快速簡單的平台所設計，可評估任何半橋拓撲結構中的 TI 整合式 GaN 裝置。此電路板的設計用途，在於使用電路板底部邊緣的 6 個電源針腳和 12 個數位針腳，採用插座式外部連接方式來與大型系統介接。電源針腳構成主要切換迴路，包括高電壓 DC 匯流排、開關節點和電源接地。數位針腳使用 PWM 閘極輸入控制 LMG2650 裝置，以低電壓供應提供輔助電源，並以數位輸出方式回報故障狀況。使用 TI 的同步降壓/升壓主機板 (LMG342X-BB-EVM)，讓您以最輕鬆的方式示範評估 LMG2650EVM-100 (...)
使用指南: PDF | HTML
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模擬型號

LMG2650 SIMPLIS Model

SNOM813.ZIP (69 KB) - SIMPLIS Model
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計算工具

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
支援產品和硬體

支援產品和硬體

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LMG2100R026 — 100V 2.6mΩ 半橋氮化鎵 (GaN) 功率級 LMG2100R044 — 具有整合式驅動器和防護功能的 100-V 4.4-mΩ 半橋 GaN FET LMG2610 — 具有整合式驅動器、保護和電流感測功能且適用於 ACF 的 650-V 170/248-mΩ GaN 半橋 LMG2640 — 具有整合式驅動器、防護和電流感測的 650V 105mΩ GaN 半橋 LMG2650 — 具有整合式驅動器、防護和電流感測的 650V 95mΩ GaN 半橋 LMG2652 — 具有整合式驅動器、防護和電流感測的 650V 140mΩ GaN 半橋 LMG2656 — 具有整合式驅動器、防護和電流感測的 650V 230mΩ GaN 半橋 LMG3410R050 — 具有整合式驅動器和保護功能的 600-V 50-mΩ GaN LMG3410R070 — 具有整合式驅動器和防護的 600V 70mΩ GaN LMG3410R150 — 具有整合驅動器和過電流保護功能的 600-V 150-mΩ GaN LMG3411R050 — 具有整合驅動器和逐週期過電流保護功能的 600V 50mΩ GaN LMG3411R070 — 具有整合驅動器和逐週期過電流保護功能的 600-V 70-mΩ GaN LMG3411R150 — 具有整合驅動器和逐週期過電流保護功能的 600-V 150-mΩ GaN LMG3422R030 — 具有整合式驅動器、防護和溫度報告功能的 600-V 30-mΩ GaN FET LMG3422R050 — 具有整合式驅動器、防護和溫度報告功能的 600-V 50-mΩ GaN FET LMG3425R030 — 具有整合式驅動器、保護、溫度報告和理想二極體模式的 600-V 30-mΩ GaN FET LMG3425R050 — 具有整合式驅動器、保護、溫度報告和理想二極體模式的 600-V 50-mΩ GaN FET LMG3426R030 — 具有整合式驅動器、防護和零電壓偵測的 600V 30mΩ GaN FET LMG3426R050 — 具有整合式驅動器、防護和零電壓偵測的 600V 50mΩ GaN FET LMG3427R030 — 具有整合式驅動器、防護和零電流偵測的 600V 30mΩ GaN FET LMG3427R050 — 具有整合式驅動器、防護和零電流偵測的 600V 50mΩ GaN FET LMG3522R030 — 具有整合式驅動器、防護和溫度報告功能的 650-V 30-mΩ GaN FET LMG3522R030-Q1 — 具有整合式驅動器、防護和溫度報告功能的車用 650-V、30-mΩ GaN FET LMG3522R050 — 具有整合式驅動器、防護和溫度報告功能的 650-V 50-mΩ GaN FET LMG3526R030 — 具有整合式驅動器、防護和零電壓偵測的 650-V 30-mΩ GaN FET LMG3526R050 — 具有整合式驅動器、防護和零電壓偵測報告的 650-V 50-mΩ GaN FET LMG3527R030 — 具有整合式驅動器、防護和零電流偵測的 650V 30mΩ GaN FET LMG5200 — 80V GaN 半橋功率級
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參考設計

TIDA-010282 — 1.3kW GaN 圖騰柱功率因數校正和馬達逆變器參考設計

此參考設計為一款 1.3kW 圖騰柱功率因數校正 (PFC) 結合馬達逆變器的解決方案，適用於大型家電及同類產品。本設計展示了一種實現數位圖騰柱 PFC 與三相永磁同步馬達 (PMSM) 無感測向量控制的方法，僅需單個 C2000™ 微控制器即可滿足高效率與低高度設計需求。此參考設計提供的軟硬體皆經過測試且隨時可用，有助於加快開發上市時間。
Design guide: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (RFB) 19 Ultra Librarian
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