LMG2100R026
- Integrated half-bridge GaN FETs and driver
- 93V continuous, 100V pulsed voltage rating
- Package optimized for easy PCB layout
- High slew rate switching with low ringing
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- Gate driver capable of up to 10MHz switching
- Excellent propagation delay (33ns typical) and matching (2ns typical)
- Internal bootstrap supply voltage clamping to prevent GaN FET overdrive
- Supply rail undervoltage for lockout protection
- Low power consumption
- Exposed top QFN package for top-side cooling
- Large GND pad for bottom-side cooling
The LMG2100R026 device is a 93V continuous, 100V pulsed, 53A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.
GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. The driver and the two GaN FETs are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R026 device is available in a 7.0mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LMG2100R026 100V, 53A GaN Half-Bridge Power Stage datasheet (Rev. A) | PDF | HTML | 2025/3/31 | ||
| Application brief | GaN FET 在人形機器人中的應用 | PDF | HTML | Download English Version | PDF | HTML | 2025/2/5 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
BOOSTXL-LMG2100-MD — LMG2100 升壓轉換器評估模組
BP-AMC0106-LMG-MD — BP-AMC0106-LMG-MD 評估模組
LMG2100EVM-097 — LMG2100R026 評估模組
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
PMP23591 — 具有 GaN 開關的 20VIN 至 60VIN、600W 車用雙相位降壓轉換器參考設計
PMP31306 — 適合 H 類音訊應用的 GaN 式雙相位升壓轉換器參考設計
TIDA-010949 — 以 GaN 為基礎，具備有線與無線通訊功能的 600W 太陽能優化器參考設計
此參考設計為太陽能最佳化工具，可支援高達 80V 的輸入電壓及 80V 的輸出電壓，並提供高達 18A 的輸出及輸入電流。此設計使用可配置的四開關降壓升壓轉換器，將面板電流升壓或降壓至串列電流。旁路電路採用智慧型二極體控制器架構設計。
此參考設計包括電源線通訊 (PLC)，同時具備無線通訊功能。數位控制和通訊皆在單一 C2000™ 微控制器 (MCU) 中執行。
TIDA-010954 — 600W GaN 型單相換流器參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN-FCRLF (VBN) | 18 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。