計算工具
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
LMG3527R030
- 650V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- LMG3526R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
- LMG3527R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
- Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance
The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3527R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
技術文件
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檢視所有 1 | 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | LMG352xR030 650 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B) | PDF | HTML | 2025年 1月 23日 |
設計與開發
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參考設計
PMP23475 — 具有零電流偵測功能的 GaN 式 5kW 雙相圖騰柱 PFC 參考設計
此參考設計為高密度且高效率的 5kW 功率因數校正 (PFC) 轉換器，並使用 TI 高效能氮化鎵 (GaN) 電源開關進行實作。測得峰值系統效率為 99.2%，開放訊框功率密度為 120W/in3。功率級在全新零電流偵測 (ZCD) 架構控制機制中使用雙相圖騰柱 PFC。新控制方法以可變頻率運作，且可在所有操作條件下維持零電壓切換 (ZVS)。此控制透過 TMS320F280039C 高性能微控制器和含整合式 ZCD 感測的 LMG3527R030 GaN 場效應電晶體 (FET) 來執行。轉換器的運作頻率範圍約在 100kHz 和 800kHz 之間。
Test report: PDF
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RQS) | 52 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。