計算工具
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
LMG2104R022
- GaN half bridge power stage with integrated driver: 100V (GaN FET options: 2.2mΩ, 4.4mΩ)
- Efficient and high-density power conversion with
- Ultra-low propagation delay (20ns) and matching (2ns)
- Independent turn-on and turn-off slew-rate control for both the GaN FETs
- Zero-voltage detection (ZVD) reporting for dead-time optimization
- Ideal diode mode (IDM) to reduce third quadrant losses in soft switching application
- Input control flexibility
- Independent input mode (IIM) control
- Single PWM input with resistor programmable dead time option for IO-limited controllers
- Robust protection
- Interlock protection in IIM mode (LMG2104)
- Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
- VDS monitoring based cycle-by-cycle short-circuit protection
- Fault indication for over-temperature, supply under-voltage and short-circuit events
- External bias power supply: 5V
- Supports 3.3V and 5V input logic levels
- Parasitic optimized QFN package with exposed top pad to support top-side cooling
The LMG210xR0xx device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.
GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.
The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
技術文件
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檢視所有 3 | 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | LMG210xR0xx 100V GaN Half-Bridge Power Stage With Integrated Protection and Smart-Switching Features datasheet | PDF | HTML | 2026年 5月 19日 |
| EVM User's guide | LMG210XR22 Evaluation Module (Rev. A) | PDF | HTML | 2025年 10月 30日 | |
| Certificate | LMG210XEVM-143 EU Declaration of Conformity (DoC) | 2025年 9月 18日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
開發板
LMG210XEVM-121 — LMG2104R044 評估模組
LMG210XR044 評估模組是一款小巧易用的功率級，且具有外部 PWM 訊號。此電路板可配置為降壓轉換器、升壓轉換器或另一個使用半橋的轉換器拓撲。本裝置可用於評估 LMG210XR044 作為硬切換轉換器的性能，藉以測量效率、切換速度與 dv/dt (電壓轉換速率) 等參數。此 EVM採用 LMG210XR044 半橋電源模組，並具有兩個由 80V GaN FET 半橋閘極驅動器驅動的 100V 4.4mΩ GaN FET。請勿用於評估暫態響應，因為此為具有外部 PWM 訊號的開環電路板。此 EVM 安裝在 LMG2104R044 裝置上。
開發板
LMG210XEVM-143 — LMG2104R022 評估模組
LMG210XR022 評估模組 (EVM) 是一款小巧易用的功率級，且具有外部 PWM 訊號。此電路板可配置為降壓轉換器、升壓轉換器或另一個使用半橋的轉換器拓撲結構。本 EVM 可用於評估 LMG210XR022 作為硬切換轉換器的性能，藉以對效率、切換速度與 dv/dt（電壓轉換速率）等測量參數進行取樣。此 EVM採用 LMG210XR022 半橋電源模組，並具有兩個由 80V GaN FET 半橋閘極驅動器驅動的 100V 2.2mΩ GaN FET。請勿用於評估暫態響應，因為此為具有外部 PWM 訊號的開環電路板。此 EVM 安裝在 LMG2104R022 裝置上。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN-FCRLF (VBN) | 18 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。