SLUSFR7 August   2025 BQ24810

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Device Power Up
        1. 6.3.1.1 Battery Only
        2. 6.3.1.2 Adapter Detect and ACOK Output
          1. 6.3.1.2.1 Adapter Overvoltage (ACOV)
        3. 6.3.1.3 REGN LDO
      2. 6.3.2 System Power Selection
      3. 6.3.3 Current and Power Monitor
        1. 6.3.3.1 High Accuracy Current Sense Amplifier (IADP and IDCHG)
        2. 6.3.3.2 High Accuracy Power Sense Amplifier (PMON)
      4. 6.3.4 Processor Hot Indication for CPU Throttling
      5. 6.3.5 Input Current Dynamic Power Management
        1. 6.3.5.1 Setting Input Current Limit
      6. 6.3.6 Two-Level Adapter Current Limit (Peak Power Mode)
      7. 6.3.7 EMI Switching Frequency Adjust
      8. 6.3.8 Device Protections Features
        1. 6.3.8.1 Charger Timeout
        2. 6.3.8.2 Input Overcurrent Protection (ACOC)
        3. 6.3.8.3 Charge Overcurrent Protection (CHG_OCP)
        4. 6.3.8.4 Battery Overvoltage Protection (BATOVP)
        5. 6.3.8.5 Battery Short
        6. 6.3.8.6 Thermal Shutdown Protection (TSHUT)
        7. 6.3.8.7 Inductor Short, MOSFET Short Protection
    4. 6.4 Device Functional Modes
      1. 6.4.1 Battery Charging in Buck Mode
        1. 6.4.1.1 Setting the Charge Current
        2. 6.4.1.2 Setting the Charge Voltage
        3. 6.4.1.3 Automatic Internal Soft-Start Charger Current
      2. 6.4.2 Hybrid Power Boost Mode
      3. 6.4.3 Battery Only Boost Mode
        1. 6.4.3.1 Setting AC_PLUG_EXIT_DEG in Battery Only Boost Mode
        2. 6.4.3.2 Setting Minimum System Voltage in Battery Only Boost Mode
      4. 6.4.4 Battery Discharge Current Regulation in Hybrid Boost Mode and Battery Only Boost Mode
      5. 6.4.5 Battery LEARN Cycle
      6. 6.4.6 Converter Operational Modes
        1. 6.4.6.1 Continuous Conduction Mode (CCM)
        2. 6.4.6.2 Discontinuous Conduction Mode (DCM)
        3. 6.4.6.3 Non-Sync Mode and Light Load Comparator
    5. 6.5 Programming
      1. 6.5.1 SMBus Interface
        1. 6.5.1.1 SMBus Write-Word and Read-Word Protocols
        2. 6.5.1.2 Timing Diagrams
    6. 6.6 Register Maps
      1. 6.6.1  Battery-Charger Commands
      2. 6.6.2  Setting Charger Options
        1. 6.6.2.1 ChargeOption0 Register
      3. 6.6.3  ChargeOption1 Register
      4. 6.6.4  ChargeOption2 Register
      5. 6.6.5  ChargeOption3 Register
      6. 6.6.6  ChargeOption4 Register
      7. 6.6.7  ProchotOption0 Register
      8. 6.6.8  ProchotOption1 Register
      9. 6.6.9  ProchotStatus Register
      10. 6.6.10 Charge Current Register
      11. 6.6.11 Charge Voltage Register
      12. 6.6.12 Discharge Current Register
      13. 6.6.13 Minimum System Voltage Register
      14. 6.6.14 Input Current Register
      15. 6.6.15 Register Exceptions
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Typical System Schematic
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1  Adapter Current Sense Filter
          2. 7.2.1.2.2  Negative Output Voltage Protection
          3. 7.2.1.2.3  Reverse Input Voltage Protection
          4. 7.2.1.2.4  Reduce Battery Quiescent Current
          5. 7.2.1.2.5  CIN Capacitance
          6. 7.2.1.2.6  L1 Inductor Selection
          7. 7.2.1.2.7  CBATT Capacitance
          8. 7.2.1.2.8  Buck Charging Internal Compensation
          9. 7.2.1.2.9  CSYS Capacitance
          10. 7.2.1.2.10 Battery Only Boost Internal Compensation
          11. 7.2.1.2.11 Power MOSFETs Selection
          12. 7.2.1.2.12 Input Filter Design
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Migration from Previous Devices (Does Not Support Battery Only Boost)
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
          1. 7.2.2.2.1 CSYS Capacitance
        3. 7.2.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Examples
        1. 7.4.2.1 Layout Consideration of Current Path
        2. 7.4.2.2 Layout Consideration of Short Circuit Protection
        3. 7.4.2.3 Layout Consideration for Short Circuit Protection
  9. 8 Device and Documentation Support
    1. 8.1 Third-Party Products Disclaimer
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RUY|28
散热焊盘机械数据 (封装 | 引脚)
订购信息
7.2.1.2.11 Power MOSFETs Selection

Two external N-channel MOSFETs are used for a synchronous switching battery charger. The gate drivers are internally integrated into the IC with 6V of gate drive voltage. 30 V or higher voltage rating MOSFETs are preferred for 19- to 20-V input voltage.

Figure-of-merit (FOM) is usually used for selecting proper MOSFET based on a tradeoff between the conduction loss and switching loss. For the top side MOSFET, FOM is defined as the product of a MOSFET's on-resistance, RDS(ON), and the gate-to-drain charge, QGD. For the bottom side MOSFET, FOM is defined as the product of the MOSFET's on-resistance, RDS(ON), and the total gate charge, QG.

Equation 12. FOMtop = RDS(on) x QGD; FOMbottom = RDS(on) x QG

The lower the FOM value, the lower the total power loss. Usually lower RDS(ON) has higher cost with the same package size.

The top-side MOSFET loss includes conduction loss and switching loss. It is a function of duty cycle (D=VOUT/VIN), charging current (ICHG), MOSFET's on-resistance (RDS(ON)), input voltage (VIN), switching frequency (fS), turn on time (ton) and turn off time (toff):

Equation 13. BQ24810

The first item represents the conduction loss. Usually MOSFET RDS(ON) increases by 50% with 100°C junction temperature rise. The second term represents the switching loss. The MOSFET turn-on and turn-off times are given by:

Equation 14. BQ24810

where Qsw is the switching charge, Ion is the turn-on gate driving current and Ioff is the turn-off gate driving current. If the switching charge is not given in MOSFET datasheet, it can be estimated by gate-to-drain charge (QGD) and gate-to-source charge (QGS):

Equation 15. BQ24810

Gate driving current can be estimated by REGN voltage (VREGN), MOSFET plateau voltage (Vplt), total turn-on gate resistance (Ron) and turn-off gate resistance (Roff) of the gate driver:

Equation 16. BQ24810

The conduction loss of the bottom-side MOSFET is calculated with the following equation when it operates in synchronous continuous conduction mode:

Equation 17. Pbottom = (1 - D) x ICHG2 x RDS(on)

When charger operates in non-synchronous mode, the bottom-side MOSFET is off. As a result all the freewheeling current goes through the body-diode of the bottom-side MOSFET. The body diode power loss depends on its forward voltage drop (VF), non-synchronous mode charging current (INONSYNC), and duty cycle (D).

Equation 18. PD = VF x INONSYNC x (1 - D)

The maximum charging current in non-synchronous mode can be up to 0.25 A for a 10-mΩ charging current sensing resistor or 0.5 A if battery voltage is below 2.5 V. The minimum duty cycle happens at lowest battery voltage. Choose the bottom-side MOSFET with either an internal Schottky or body diode capable of carrying the maximum non-synchronous mode charging current.