SBAK043 April   2026 DAC39RF10-SP , DAC39RFS10-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Test Setup and Procedures
  9. 6Single-Event Latch-Up (SEL) Results
  10. 7Single-Event Functional Interrupt (SEFI) Results
    1. 7.1 Converter Performance and Digital (DUC + JESD204C Link) Hardness
    2. 7.2 Configuration Register Hardness
    3. 7.3 SPI Programming During Irradiation
  11. 8SEU Results
    1. 8.1 JESD204C Link Monitoring Results
    2. 8.2 Digital Up-Converter and NCO Upset Recovery
    3. 8.3 Estimating Upset Rates in Unprotected Data Paths
    4. 8.4 Event Rate Calculations
    5. 8.5 Summary of Radiation Hardness
  12. 9References
  13.   A Appendix: Recommendations for Hi-Rel Systems
    1.     A.1 Summary of Rad-Hard Design Features
    2.     A.2 SPI Programming
    3.     A.3 JESD204C Reliability
    4.     A.4 Equalizer Usage in Radiation Environments
    5.     A.5 NCO Reliability
    6.     A.6 NCO Frequency and Phase Correction (Strategy #1)
    7.     A.7 NCO Frequency Correction (Strategy #2)
    8.     A.8 NCO Self-Sync/Self-Coherent Mode (Strategy #3)

9 References

  1. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
  2. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.
  3. Cyclotron Institute, Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility, webpage.
  4. D. Kececioglu, Reliability and Life Testing Handbook, Vol. 1, PTR Prentice Hall, New Jersey, 1993, pp. 186-193.
  5. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  6. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.
  7. Texas Instruments, Radiation Handbook for Electronics, e-book.
  8. Vanderbilt University, ISDE CRÈME-MC, webpage.
  9. Ziegler, James F. SRIM- The Stopping and Range of Ions in Matter, webpage.