ZHCSPB0 april   2023 LM5171-Q1

ADVANCE INFORMATION  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Bias Supplies and Voltage Reference (VCC, VDD, and VREF)
      2. 7.3.2  Undervoltage Lockout (UVLO) and Controller Enable or Disable
      3. 7.3.3  High Voltage Inputs (HV1, HV2)
      4. 7.3.4  Current Sense Amplifier
      5. 7.3.5  Control Commands
        1. 7.3.5.1 Channel Enable Commands (EN1, EN2)
        2. 7.3.5.2 Direction Command (DIR1 and DIR2)
        3. 7.3.5.3 Channel Current Setting Commands (ISET1 and ISET2)
      6. 7.3.6  Channel Current Monitor (IMON1, IMON2)
        1. 7.3.6.1 Individual Channel Current Monitor
        2. 7.3.6.2 Multiphase Total Current Monitoring
      7. 7.3.7  Cycle-by-Cycle Peak Current Limit (IPK)
      8. 7.3.8  Inner Current Loop Error Amplifier
      9. 7.3.9  Outer Voltage Loop Error Amplifier
      10. 7.3.10 Soft Start, Diode Emulation, and Forced PWM Control (SS/DEM1 and SS/DEM2)
        1. 7.3.10.1 Soft-Start Control by the SS/DEM Pins
        2. 7.3.10.2 DEM Programming
        3. 7.3.10.3 FPWM Programming and Dynamic FPWM and DEM Change
        4. 7.3.10.4 SS Pin as the Restart Timer
      11. 7.3.11 Gate Drive Outputs, Dead Time Programming and Adaptive Dead Time (HO1, HO2, LO1, LO2, DT/SD)
      12. 7.3.12 Emergent Latched Shutdown (DT/SD)
      13. 7.3.13 PWM Comparator
      14. 7.3.14 Oscillator (OSC)
      15. 7.3.15 Synchronization to an External Clock (SYNCI, SYNCO)
      16. 7.3.16 Overvoltage Protection (OVP)
      17. 7.3.17 Multiphase Configurations (SYNCO, OPT)
        1. 7.3.17.1 Multiphase in Star Configuration
        2. 7.3.17.2 Daisy-Chain Configurations for 2, 3, or 4 Phases parallel operations
        3. 7.3.17.3 Daisy-Chain configuration for 6 or 8 phases parallel operation
      18. 7.3.18 Thermal Shutdown
    4. 7.4 Programming
      1. 7.4.1 Dynamic Dead Time Adjustment
      2. 7.4.2 UVLO Programming
    5. 7.5 I2C Serial Interface
      1. 7.5.1 REGFIELD Registers
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Small Signal Model
        1. 8.1.1.1 Current Loop Small Signal Model
        2. 8.1.1.2 Current Loop Compensation
        3. 8.1.1.3 Voltage Loop Small Signal Model
        4. 8.1.1.4 Voltage Loop Compensation
    2. 8.2 Typical Application
      1. 8.2.1 60-A, Dual-Phase, 48-V to 12-V Bidirectional Converter
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Determining the Duty Cycle
          2. 8.2.1.2.2  Oscillator Programming
          3. 8.2.1.2.3  Power Inductor, RMS and Peak Currents
          4. 8.2.1.2.4  Current Sense (RCS)
          5. 8.2.1.2.5  Current Setting Limits (ISETx)
          6. 8.2.1.2.6  Peak Current Limit
          7. 8.2.1.2.7  Power MOSFETS
          8. 8.2.1.2.8  Bias Supply
          9. 8.2.1.2.9  Boot Strap
          10. 8.2.1.2.10 OVP
          11. 8.2.1.2.11 Dead Time
          12. 8.2.1.2.12 Channel Current Monitor (IMONx)
          13. 8.2.1.2.13 UVLO Pin Usage
          14. 8.2.1.2.14 HVx Pin Configuration
          15. 8.2.1.2.15 Loop Compensation
          16. 8.2.1.2.16 Soft Start
          17. 8.2.1.2.17 PWM to ISET Pins
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  9. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  10. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息
Power MOSFETS

The power MOSFETs must be chosen with a VDS rating capable of withstanding the maximum HV-port voltage plus transient spikes (ringing). 100 V rated MOSFETs is selected in this application.

When the voltage rating is determined, select the MOSFETs by making tradeoffs between the MOSFET Rds(ON) and total gate charge Qg to balance the conduction and switching losses. For high power applications, parallel MOSFETs to share total power and reduce the dissipation on any individual MOSFET, hence relieving the thermal stress. The conduction losses in each MOSFET is determined by Equation 82.

Equation 82. GUID-EF9B96A1-B835-4FD9-B28D-FC1683672E5F-low.gif

where

  • N is the number of MOSFETs in parallel
  • 1.8 is the approximate temperature coefficient of the Rds(ON) at 125 °C
  • and the total RMS switch current IQ_RMS is approximately determined by Equation 83
Equation 83. GUID-7BE0BDA2-CF0D-43E1-B247-0E450FC0F09D-low.gif

where

  • Dmax is the maximum duty cycle, either in the buck mode or boost mode.

The switching transient rise and fall times are approximately determined by:

Equation 84. GUID-CCC11681-1921-40D0-B16D-02204DC04D7E-low.gif
Equation 85. GUID-5C5A681E-30AA-4A3F-A7AF-1A3325173724-low.gif

And the switching losses of each of the paralleled MOSFETs are approximately determined by:

Equation 86. GUID-E764D425-4ABC-416B-BCD0-DDF713A48D5B-low.gif

where

  • Coss is the output capacitance of the MOSFET.

The power MOSFET usually requires a gate-to-source resistor of 10 kΩ to 100 kΩ to mitigate the effects of a failed gate drive. When using parallel MOSFETs, a good practice is to use 1- to 2-Ω gate resistor for each MOSFET, as shown in Figure 8-8.

GUID-20230210-SS0I-ZCLT-K0WS-ZTMGH0PQ8NW8-low.svg Figure 8-8 Paralleled MOSFET Configuration

If the dead time is not optimal, the body diode of the power synchronous rectifier MOSFET causes losses in reverse recovery. Assuming the reverse recovery charge of the power MOSFET is Qrr, the reverse recovery losses are thus determined by Equation 87:

Equation 87. GUID-EEA814B3-5095-4DAD-96C8-63C60F9CD853-low.gif

To reduce the reverse recovery losses, an optional Schottky diode can be placed in parallel with the power MOSFETs. The diode must have the same voltage rating as the MOSFET, and it must be placed directly across the MOSFETs drain and source. The peak repetitive forward current rating must be greater than Ipeak, and the continuous forward current rating must be greater than the following Equation 88:

Equation 88. GUID-B7361F32-1139-4622-879B-B25E69FB05AF-low.gif