ZHCSGX4C June   2017  – April 2021 BQ40Z50-R2

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Functions
    1. 6.1 Pin Equivalent Diagrams
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current
    6. 7.6  Power Supply Control
    7. 7.7  AFE Power-On Reset
    8. 7.8  AFE Watchdog Reset and Wake Timer
    9. 7.9  Current Wake Comparator
    10. 7.10 VC1, VC2, VC3, VC4, BAT, PACK
    11. 7.11 SMBD, SMBC
    12. 7.12 PRES, BTP_INT, DISP
    13. 7.13 LEDCNTLA, LEDCNTLB, LEDCNTLC
    14. 7.14 Coulomb Counter
    15. 7.15 CC Digital Filter
    16. 7.16 ADC
    17. 7.17 ADC Digital Filter
    18. 7.18 CHG, DSG FET Drive
    19. 7.19 PCHG FET Drive
    20. 7.20 FUSE Drive
    21. 7.21 Internal Temperature Sensor
    22. 7.22 TS1, TS2, TS3, TS4
    23. 7.23 PTC, PTCEN
    24. 7.24 Internal 1.8-V LDO
    25. 7.25 High-Frequency Oscillator
    26. 7.26 Low-Frequency Oscillator
    27. 7.27 Voltage Reference 1
    28. 7.28 Voltage Reference 2
    29. 7.29 Instruction Flash
    30. 7.30 Data Flash
    31. 7.31 OLD, SCC, SCD1, SCD2 Current Protection Thresholds
    32. 7.32 Timing Requirements: OLD, SCC, SCD1, SCD2 Current Protection Timing
    33. 7.33 Timing Requirements: SMBus
    34. 7.34 Timing Requirements: SMBus XL
    35. 7.35 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Primary (1st Level) Safety Features
      2. 8.3.2  Secondary (2nd Level) Safety Features
      3. 8.3.3  Charge Control Features
      4. 8.3.4  Gas Gauging
      5. 8.3.5  Configuration
        1. 8.3.5.1 Oscillator Function
        2. 8.3.5.2 System Present Operation
        3. 8.3.5.3 Emergency Shutdown
        4. 8.3.5.4 1-Series, 2-Series, 3-Series, or 4-Series Cell Configuration
        5. 8.3.5.5 Cell Balancing
      6. 8.3.6  Battery Parameter Measurements
        1. 8.3.6.1 Charge and Discharge Counting
      7. 8.3.7  Battery Trip Point (BTP)
      8. 8.3.8  Lifetime Data Logging Features
      9. 8.3.9  Authentication
      10. 8.3.10 LED Display
      11. 8.3.11 IATA Support
      12. 8.3.12 Voltage
      13. 8.3.13 Current
      14. 8.3.14 Temperature
      15. 8.3.15 Communications
        1. 8.3.15.1 SMBus On and Off State
        2. 8.3.15.2 SBS Commands
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 High-Current Path
          1. 9.2.2.1.1 Protection FETs
          2. 9.2.2.1.2 Chemical Fuse
          3. 9.2.2.1.3 Li-Ion Cell Connections
          4. 9.2.2.1.4 Sense Resistor
          5. 9.2.2.1.5 ESD Mitigation
        2. 9.2.2.2 Gas Gauge Circuit
          1. 9.2.2.2.1 Coulomb-Counting Interface
          2. 9.2.2.2.2 Power Supply Decoupling and PBI
          3. 9.2.2.2.3 System Present
          4. 9.2.2.2.4 SMBus Communication
          5. 9.2.2.2.5 FUSE Circuitry
        3. 9.2.2.3 Secondary-Current Protection
          1. 9.2.2.3.1 Cell and Battery Inputs
          2. 9.2.2.3.2 External Cell Balancing
          3. 9.2.2.3.3 PACK and FET Control
          4. 9.2.2.3.4 Temperature Output
          5. 9.2.2.3.5 LEDs
          6. 9.2.2.3.6 Safety PTC Thermistor
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Protector FET Bypass and Pack Terminal Bypass Capacitors
      2. 11.1.2 ESD Spark Gap
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 第三方产品免责声明
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
      2. 12.2.2 Receiving Notification of Documentation Updates
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息
PACK and FET Control

The PACK and VCC inputs provide power to the BQ40Z50-R2 device from the charger. The PACK input also provides a method to measure and detect the presence of a charger. The PACK input uses a 10-kΩ resistor; whereas, the VCC input uses an internal diode to guard against input transients and prevent a misoperation of the gate driver during short-circuit events.

GUID-3849549A-2B7F-4914-A7C0-AB09018D8C58-low.gifFigure 9-13 BQ40Z50-R2 PACK and FET Control

The N-channel charge and discharge FETs are controlled with 5.1-kΩ series gate resistors, which provide a switching time constant of a few microseconds. The 10-MΩ resistors ensure that the FETs are off in the event of an open connection to the FET drivers. Q4 is provided to protect the discharge FET (Q3) in the event of a reverse-connected charger. Without Q4, Q3 can be driven into its linear region and suffer severe damage if the PACK+ input becomes slightly negative.

Q4 turns on in that case to protect Q3 by shorting its gate to source. To use the simple ground gate circuit, the FET must have a low gate turn-on threshold. If it is desired to use a more standard device, such as the 2N7002 as the reference schematic, the gate should be biased up to 3.3 V with a high-value resistor. The BQ40Z50-R2 device has the capability to provide a current-limited charging path typically used for low battery voltage or low temperature charging. The BQ40Z50-R2 device uses an external P-channel, precharge FET controlled by PCHG.