產品詳細資料

Rating Catalog Architecture Gate driver Control interface 3xPWM, 6xPWM Gate drive (A) 0.75 Vs (min) (V) 5 Vs ABS (max) (V) 100 Features Bootstrap Diode Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Gate driver Control interface 3xPWM, 6xPWM Gate drive (A) 0.75 Vs (min) (V) 5 Vs ABS (max) (V) 100 Features Bootstrap Diode Operating temperature range (°C) -40 to 125
TSSOP (PW) 20 41.6 mm² (6.5 mm × 6.4 mm) VQFN (RGE) 24 16 mm² (4 mm × 4 mm)
  • 100V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20V
    • MOSFET supply (SHx) support up to 100V
  • Integrated Bootstrap Diodes (DRV8300UD devices)
  • Supports Inverting and Non-Inverting INLx inputs
  • Bootstrap gate drive architecture
    • 750mA source current
    • 1.5A sink current
  • Supports up to 15S battery powered applications
  • Higher BSTUV (8V typ) and GVDDUV (7.6V typ) threshold to support standard MOSFETs
  • Low leakage current on SHx pins (<55µA)
  • Absolute maximum BSTx voltage up to 125V
  • Supports negative transients up to -22V on SHx
  • Built-in cross conduction prevention
  • Adjustable deadtime through DT pin for QFN package variants
  • Fixed deadtime insertion of 200nS for TSSOP package variants
  • Supports 3.3V and 5V logic inputs with 20V Abs max
  • 4nS typical propagation delay matching
  • Compact QFN and TSSOP packages
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)
  • 100V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20V
    • MOSFET supply (SHx) support up to 100V
  • Integrated Bootstrap Diodes (DRV8300UD devices)
  • Supports Inverting and Non-Inverting INLx inputs
  • Bootstrap gate drive architecture
    • 750mA source current
    • 1.5A sink current
  • Supports up to 15S battery powered applications
  • Higher BSTUV (8V typ) and GVDDUV (7.6V typ) threshold to support standard MOSFETs
  • Low leakage current on SHx pins (<55µA)
  • Absolute maximum BSTx voltage up to 125V
  • Supports negative transients up to -22V on SHx
  • Built-in cross conduction prevention
  • Adjustable deadtime through DT pin for QFN package variants
  • Fixed deadtime insertion of 200nS for TSSOP package variants
  • Supports 3.3V and 5V logic inputs with 20V Abs max
  • 4nS typical propagation delay matching
  • Compact QFN and TSSOP packages
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)

DRV8300U is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

DRV8300U is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

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* 資料表 DRV8300U: 100V Three-Phase BLDC Gate Driver datasheet (Rev. B) PDF | HTML 2025/6/24

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DRV8300DIPW-EVM — 適用於三相 BLDC 的 DRV8300DIPW 評估模組

DRV8300DIPW-EVM 是以 BLDC 馬達之 DRV8300DIPW 閘極驅動器為基礎的 30A、3 相無刷 DC 驅動級。DRV8300DIPW 包含三個二極體以供靴帶運作,無需使用外部二極體。

EVM 包括三個電流分流放大器,適用於低壓側電流量測,以及 PVDD/GVDD 電壓和基板溫度的回饋。可向 EVM 提供最高 100V 電壓,而板載降壓則可產生靴帶式 GVDD 供應所需的 12V 電壓。所有電源供應器的狀態 LED 及故障 LED 均包含在內,以供使用者回饋。

此套件需要 C2000 launchpad (LAUNCHXL-F280049C),用於控制 (...)

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DRV8300DRGE-EVM — DRV8300DRGE 三相 BLDC 評估模組

DRV8300DRGE-EVM 是以 BLDC 馬達之 DRV8300DRGE 閘極驅動器為基礎的 30A、3 相無刷 DC 驅動級。

DRV8300DRGE 包含三個二極體以供靴帶運作,無需使用外部二極體。EVM 包括三個電流分流放大器,適用於低壓側電流量測,以及 PVDD/GVDD 電壓和基板溫度的回饋。可向 EVM 提供最高 100V 電壓,而板載降壓則可產生靴帶式 GVDD 供應所需的 12V 電壓。

所有電源供應器的狀態 LED 及故障 LED 均包含在內,以供使用者回饋。此套件需要 C2000 launchpad (LAUNCHXL-F280049C),用於控制 (...)

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MSP-MOTOR-CONTROL — MSPM0 Firmware solutions for motor control applications

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MSP 馬達控制提供可轉動有刷、步進與三相馬達的受支援硬體套件範例,具備最佳性能、整合性與易用性的感測和無感測器控制演算法。透過訂購硬體、連接馬達及使用我們的圖形使用者介面或線上程式碼範例,可隨時運轉您的馬達。

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TSSOP (PW) 20 Ultra Librarian
VQFN (RGE) 24 Ultra Librarian

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