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DRV8300U

現行

具有自舉二極體及增強 UVLO 防護的最大 100-V 簡單三相閘極驅動器

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產品規格表

DRV8300U

現行
產品規格表 立即訂購

產品詳細資料

Rating Catalog Architecture Gate driver Control interface 3xPWM, 6xPWM Gate drive (A) 0.75 Vs (min) (V) 5 Vs ABS (max) (V) 100 Features Bootstrap Diode Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Gate driver Control interface 3xPWM, 6xPWM Gate drive (A) 0.75 Vs (min) (V) 5 Vs ABS (max) (V) 100 Features Bootstrap Diode Operating temperature range (°C) -40 to 125
TSSOP (PW) 20 41.6 mm² 6.5 x 6.4 VQFN (RGE) 24 16 mm² 4 x 4
  • 100V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20V
    • MOSFET supply (SHx) support up to 100V
  • Integrated Bootstrap Diodes (DRV8300UD devices)
  • Supports Inverting and Non-Inverting INLx inputs
  • Bootstrap gate drive architecture
    • 750mA source current
    • 1.5A sink current
  • Supports up to 15S battery powered applications
  • Higher BSTUV (8V typ) and GVDDUV (7.6V typ) threshold to support standard MOSFETs
  • Low leakage current on SHx pins (<55µA)
  • Absolute maximum BSTx voltage up to 125V
  • Supports negative transients up to -22V on SHx
  • Built-in cross conduction prevention
  • Adjustable deadtime through DT pin for QFN package variants
  • Fixed deadtime insertion of 200nS for TSSOP package variants
  • Supports 3.3V and 5V logic inputs with 20V Abs max
  • 4nS typical propagation delay matching
  • Compact QFN and TSSOP packages
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)
  • 100V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20V
    • MOSFET supply (SHx) support up to 100V
  • Integrated Bootstrap Diodes (DRV8300UD devices)
  • Supports Inverting and Non-Inverting INLx inputs
  • Bootstrap gate drive architecture
    • 750mA source current
    • 1.5A sink current
  • Supports up to 15S battery powered applications
  • Higher BSTUV (8V typ) and GVDDUV (7.6V typ) threshold to support standard MOSFETs
  • Low leakage current on SHx pins (<55µA)
  • Absolute maximum BSTx voltage up to 125V
  • Supports negative transients up to -22V on SHx
  • Built-in cross conduction prevention
  • Adjustable deadtime through DT pin for QFN package variants
  • Fixed deadtime insertion of 200nS for TSSOP package variants
  • Supports 3.3V and 5V logic inputs with 20V Abs max
  • 4nS typical propagation delay matching
  • Compact QFN and TSSOP packages
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)

DRV8300U is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

DRV8300U is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

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* Data sheet DRV8300U: 100V Three-Phase BLDC Gate Driver datasheet (Rev. B) PDF | HTML 2025年 6月 24日

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