DRV8706-Q1
- AEC-Q100 qualified for automotive applications:
- Temperature grade 1: –40°C to +125°C, TA
-
Functional Safety-Capable
- Documentation available to aid functional safety system design
- H-bridge
smart gate driver
- 4.9-V to 37-V (40-V abs. max) operating range
- Doubler charge pump for 100% PWM
- Half-bridge and H-bridge control modes
- Pin to pin gate driver
variants
- DRV8106-Q1: Half-bridge with inline amplifier
- DRV8705-Q1: H-bridge with low-side amplifier
- Smart gate drive architecture
- Adjustable slew rate control
- 0.5-mA to 62-mA peak source current output
- 0.5-mA to 62-mA peak sink current output
- Integrated dead-time handshaking
- Wide common mode
current shunt amplifier
- Supports inline, high-side, or low-side
- Adjustable gain settings (10, 20, 40, 80 V/V)
- Integrated feedback resistors
- Adjustable PWM blanking scheme
- Multiple interface options available
- SPI: Detailed configuration and diagnostics
- H/W: Simplified control and less MCU pins
- Spread spectrum clocking for EMI reduction
- Compact VQFN package with wettable flanks
- Integrated protection features
- Dedicated driver disable pin (DRVOFF)
- Supply and regulator voltage monitors
- MOSFET VDS overcurrent monitors
- MOSFET VGS gate fault monitors
- Charge pump for reverse polarity MOSFET
- Offline open load and short circuit diagnostics
- Device thermal warning and shutdown
- Fault condition interrupt pin (nFAULT)
The DRV8706-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.
The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.
A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.
The DRV8706-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.
您可能會感興趣的類似產品
功能相同，但針腳輸出與所比較的裝置不同。
功能相似於所比較的產品。
技術文件
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
DRV8706H-Q1EVM — 具有寬共模電流感測放大器的車用半橋智慧型閘極驅動器評估模組
DRV8706H-Q1EVM 設計旨在評估 DRV8706H-Q1，是一款符合車用資格的整合式有刷 DC 馬達驅動器。 DRV8706H-Q1 是一款高度整合的全橋閘極驅動器，可驅動高壓側和低壓側 N 通道電源 MOSFET。其在高壓側使用整合式倍頻充電泵，並在低壓側採用線性穩壓器，以產生適當閘極驅動電壓。
此裝置採用智慧閘極驅動器架構，可降低系統成本並提升可靠性。閘極驅動器將失效時間最佳化以避免擊穿情況，其透過可調式閘極驅動電流提供控制以減少電磁干擾 (EMI)，並利用 VDS 和 VGS 監控器防止汲極至來源和閘極短路狀況。
廣泛共模分流放大器提供內嵌電流感測以持續測量馬達電流。
(...)
DRV8706S-Q1EVM — 具有廣泛共模電流感測放大器的車用全橋智慧型閘極驅動器 EVM
DRV8706S-Q1EVM 設計旨在評估 DRV8706S-Q1，是一款符合車用資格的整合式有刷 DC 馬達驅動器。DRV8706S-Q1 是一款高度整合的全橋閘極驅動器，可驅動高壓側和低壓側 N 通道電源 MOSFET。其在高壓側使用整合式倍頻充電泵，並在低壓側採用線性穩壓器，以產生適當閘極驅動電壓。
此裝置採用智慧閘極驅動器架構，可降低系統成本並提升可靠性。閘極驅動器將失效時間最佳化以避免擊穿情況，其透過可調式閘極驅動電流提供控制以減少電磁干擾 (EMI)，並利用 VDS 和 VGS 監控器防止汲極至來源和閘極短路狀況。
(...)
MSP-MOTOR-CONTROL — MSPM0 Firmware solutions for motor control applications
MSP 馬達控制為一系列軟體、工具和範例，可在 30 分鐘或更短時間內運用 MSPM0 Arm® Cortex® M0+ MCU 和熱門馬達驅動器解決方案來運轉馬達。
MSP 馬達控制提供可轉動有刷、步進與三相馬達的受支援硬體套件範例，具備最佳性能、整合性與易用性的感測和無感測器控制演算法。透過訂購硬體、連接馬達及使用我們的圖形使用者介面或線上程式碼範例，可隨時運轉您的馬達。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RHB) | 32 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。