首頁 馬達驅動器 無刷 DC (BLDC) 馬達驅動器 BLDC 驅動器
首頁
馬達驅動器
無刷 DC (BLDC) 馬達驅動器
BLDC 驅動器

DRV8300-Q1

現行

具有自舉二極體的汽車最大 100-V 簡單三相閘極驅動器

立即訂購
產品規格表

DRV8300-Q1

現行
產品規格表 立即訂購

產品詳細資料

Rating Automotive Architecture Gate driver Control interface 3xPWM, 6xPWM Gate drive (A) 0.75 Vs (min) (V) 5 Vs ABS (max) (V) 100 Features Bootstrap Diode Operating temperature range (°C) -40 to 125
Rating Automotive Architecture Gate driver Control interface 3xPWM, 6xPWM Gate drive (A) 0.75 Vs (min) (V) 5 Vs ABS (max) (V) 100 Features Bootstrap Diode Operating temperature range (°C) -40 to 125
TSSOP (PW) 20 41.6 mm² 6.5 x 6.4
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C ≤ TA ≤ 125°C
  • 100-V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support upto 100 V
  • Integrated Bootstrap Diodes
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A sink current
  • Supports up to 48-V auto systems
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 115-V
  • Supports negative transients upto -22-V on SHx
  • Built-in cross conduction prevention
  • Fixed deadtime insertion of 215 ns
  • Supports 3.3-V and 5-V logic inputs with 20 V Abs max
  • 4 nS typical propogation delay matching
  • Compact TSSOP package
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C ≤ TA ≤ 125°C
  • 100-V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support upto 100 V
  • Integrated Bootstrap Diodes
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A sink current
  • Supports up to 48-V auto systems
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 115-V
  • Supports negative transients upto -22-V on SHx
  • Built-in cross conduction prevention
  • Fixed deadtime insertion of 215 ns
  • Supports 3.3-V and 5-V logic inputs with 20 V Abs max
  • 4 nS typical propogation delay matching
  • Compact TSSOP package
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)

DRV8300 -Q1 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300 -Q1 generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (115-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

DRV8300 -Q1 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300 -Q1 generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (115-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

filter 尋找其它 BLDC 驅動器
下載 觀看有字幕稿的影片 影片

您可能會感興趣的類似產品

open-in-new 比較替代產品
引腳對引腳且具備與所比較裝置相同的功能
DRV8300 現行 具有自舉二極體的最大 100-V 簡單 3 相閘極驅動器 Industrial qualified version

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件，然後再試一次。
檢視所有 3
重要文件 類型 標題 格式選項 日期
* Data sheet DRV8300-Q1: 100-V Three-Phase BLDC Gate Driver datasheet PDF | HTML 2021年 12月 8日
Application brief Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) PDF | HTML 2025年 12月 11日
Certificate DRV8300DPW-Q1EVM EU RoHS Declaration of Conformity (DoC) 2021年 12月 8日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

DRV8300DPW-Q1EVM — 適用於三相 BLDC 閘極驅動器的 DRV8300DPW-Q1 評估模組

DRV8300DPW-Q1EVM 是以 BLDC 馬達 DRV8300DPWRQ1 閘極驅動器為基礎的 30-A、3 相無刷 DC 驅動級。  

DRV8300DPWRQ1 包含三個二極體以供靴帶運作，無需使用外部二極體。EVM 包括三個電流分流放大器，適用於低壓側電流量測，以及 PVDD/GVDD 電壓和基板溫度的回饋。可向 EVM 提供最高 100V 電壓，而板載降壓則可產生靴帶式 GVDD 供應所需的 12V 電壓。所有電源供應器的狀態 LED 及故障 LED 均包含在內，以供使用者回饋。

此套件需要 C2000 launchpad (LAUNCHXL-F280049C)，用於控制 (...)

使用指南: PDF | HTML
TI.com 無法提供
快速入門

MSP-MOTOR-CONTROL — MSP firmware solutions for motor control

MSP Motor Control is a collection of software, tools and examples to spin motors in 30 minutes or less with MSPM0 Arm® Cortex® M0+ MCUs and popular motor driver solutions.

MSP Motor Control provides examples for supported hardware kits to spin brushed, stepper, and three-phase motors with sensored (...)

支援產品和硬體

支援產品和硬體
開始使用 下載選項
封裝 針腳 CAD 符號、佔位空間與 3D 模型
TSSOP (PW) 20 Ultra Librarian
適用 TI 的評估品項標準條款與條件。

訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中的可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

以英文檢視所有論壇主題

內容係由 TI 和社群貢獻者依「現狀」提供，且不構成 TI 規範。檢視使用條款。

若有關於品質、封裝或訂購 TI 產品的問題，請參閱 TI 支援。​​​​​​​​​​​​​​

影片