產品詳細資料

Rating Catalog Architecture Gate driver Control interface 3xPWM, 6xPWM Gate drive (A) 0.75 Vs (min) (V) 5 Vs ABS (max) (V) 100 Features Bootstrap Diode Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Gate driver Control interface 3xPWM, 6xPWM Gate drive (A) 0.75 Vs (min) (V) 5 Vs ABS (max) (V) 100 Features Bootstrap Diode Operating temperature range (°C) -40 to 125
TSSOP (PW) 20 41.6 mm² 6.5 x 6.4 VQFN (RGE) 24 16 mm² 4 x 4
  • 100-V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support upto 100 V
  • Integrated Bootstrap Diodes (DRV8300D devices)
  • Supports Inverting and Non-Inverting INLx inputs
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A sink current
  • Supports up to 15S battery powered applications
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 125-V
  • Supports negative transients upto -22-V on SHx
  • Built-in cross conduction prevention
  • Adjustable deadtime through DT pin for QFN package variants
  • Fixed deadtime insertion of 200 nS for TSSOP package variants
  • Supports 3.3-V and 5-V logic inputs with 20 V Abs max
  • 4 nS typical propogation delay matching
  • Compact QFN and TSSOP packages
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)
  • 100-V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support upto 100 V
  • Integrated Bootstrap Diodes (DRV8300D devices)
  • Supports Inverting and Non-Inverting INLx inputs
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A sink current
  • Supports up to 15S battery powered applications
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 125-V
  • Supports negative transients upto -22-V on SHx
  • Built-in cross conduction prevention
  • Adjustable deadtime through DT pin for QFN package variants
  • Fixed deadtime insertion of 200 nS for TSSOP package variants
  • Supports 3.3-V and 5-V logic inputs with 20 V Abs max
  • 4 nS typical propogation delay matching
  • Compact QFN and TSSOP packages
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)

DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

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重要文件 類型 標題 格式選項 日期
* Data sheet DRV8300: 100-V Three-Phase BLDC Gate Driver datasheet (Rev. D) PDF | HTML 2021年 11月 22日
Application note Brushless-DC Motor Driver Considerations and Selection Guide (Rev. A) PDF | HTML 2022年 5月 16日
Application note Hardware Design Considerations for an Electric Bicycle using BLDC Motor (Rev. B) 2021年 6月 23日
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML 2021年 6月 22日
Certificate DRV8300DRGE-EVM EU RoHS Declaration of Conformity (DoC) 2021年 2月 4日
Certificate DRV8300DIPW-EVM EU RoHS Declaration of Conformity (DoC) 2020年 12月 23日

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開發板

DRV8300DIPW-EVM — 適用於三相 BLDC 的 DRV8300DIPW 評估模組

DRV8300DIPW-EVM 是以 BLDC 馬達之 DRV8300DIPW 閘極驅動器為基礎的 30A、3 相無刷 DC 驅動級。DRV8300DIPW 包含三個二極體以供靴帶運作,無需使用外部二極體。

EVM 包括三個電流分流放大器,適用於低壓側電流量測,以及 PVDD/GVDD 電壓和基板溫度的回饋。可向 EVM 提供最高 100V 電壓,而板載降壓則可產生靴帶式 GVDD 供應所需的 12V 電壓。所有電源供應器的狀態 LED 及故障 LED 均包含在內,以供使用者回饋。

此套件需要 C2000 launchpad (LAUNCHXL-F280049C),用於控制 (...)

使用指南: PDF | HTML
開發板

DRV8300DRGE-EVM — DRV8300DRGE 三相 BLDC 評估模組

DRV8300DRGE-EVM 是以 BLDC 馬達之 DRV8300DRGE 閘極驅動器為基礎的 30A、3 相無刷 DC 驅動級。

DRV8300DRGE 包含三個二極體以供靴帶運作,無需使用外部二極體。EVM 包括三個電流分流放大器,適用於低壓側電流量測,以及 PVDD/GVDD 電壓和基板溫度的回饋。可向 EVM 提供最高 100V 電壓,而板載降壓則可產生靴帶式 GVDD 供應所需的 12V 電壓。

所有電源供應器的狀態 LED 及故障 LED 均包含在內,以供使用者回饋。此套件需要 C2000 launchpad (LAUNCHXL-F280049C),用於控制 (...)

使用指南: PDF | HTML
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MSP-MOTOR-CONTROL MSP firmware solutions for motor control

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TSSOP (PW) 20 Ultra Librarian
VQFN (RGE) 24 Ultra Librarian

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