SLUUCK0A September 2023 – June 2026 ISO5451 , ISO5451-Q1 , ISO5452 , ISO5452-Q1 , ISO5851 , ISO5851-Q1 , ISO5852S , ISO5852S-EP , ISO5852S-Q1 , UCC21710 , UCC21710-Q1 , UCC21732 , UCC21732-Q1 , UCC21736-Q1 , UCC21739-Q1 , UCC21750 , UCC21750-Q1 , UCC21759-Q1
If a higher drive strength is required, populate an on-board booster stage. To populate the booster stage, remove R47 and R51, populate Q1 with PHPT60410NYX, and populate Q2 with PHPT60410PYX for the low-side gate driver. Remove R81 and R85, populate Q4 with PHPT60410NYX, and populate Q5 with PHPT60410PYX for the high-side driver. Other BJTs with the same package are also useable.
The booster stage can impede the soft turn-off feature. To realize soft turn-off after enabling the booster stage, a damper circuit, the R56/C46 combination for low-side driver and the R89/C61 combination for high-side driver, can be used. Without the damper circuit, the OUTL pin tries to sink the soft turn-off current from the base of the booster stage. The booster stage amplifies this current and result in a larger turn-off current for the IGBT/SiC MOSFET and a higher Vds overshoot. The capacitor in the damper circuit can help mediate this issue by supplying current to the OUTL pin during a soft turn-off event, thus resulting in lower current being pulled from the base of the booster stage and lower turn-off current for the SiC MOSFET/IGBT.