产品详细信息

Number of channels (#) 1 Isolation rating (Vrms) 3000 Power switch IGBT, SiCFET Peak output current (A) 10 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8400 DIN V VDE V 0884-10 working voltage (Vpk) 990 Output VCC/VDD (Max) (V) 33 Output VCC/VDD (Min) (V) 13 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 90 Operating temperature range (C) -40 to 150 Undervoltage lockout (Typ) 12
Number of channels (#) 1 Isolation rating (Vrms) 3000 Power switch IGBT, SiCFET Peak output current (A) 10 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8400 DIN V VDE V 0884-10 working voltage (Vpk) 990 Output VCC/VDD (Max) (V) 33 Output VCC/VDD (Min) (V) 13 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 90 Operating temperature range (C) -40 to 150 Undervoltage lockout (Typ) 12
SOIC (DW) 16 77 mm² 10.3 x 7.5
  • 3-kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • Drives SiC MOSFETs and IGBTs up to 990Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • High peak drive current and high CMTI
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off under fault conditions
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transients and pulses on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to +150°C
  • Safety-related certifications (Planned):
    • 6000-VPK basic isolation per DIN V VDE V0884-11: 2017-01
    • 3-kVRMS isolation for 1 minute per UL 1577
  • 3-kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • Drives SiC MOSFETs and IGBTs up to 990Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • High peak drive current and high CMTI
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off under fault conditions
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transients and pulses on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to +150°C
  • Safety-related certifications (Planned):
    • 6000-VPK basic isolation per DIN V VDE V0884-11: 2017-01
    • 3-kVRMS isolation for 1 minute per UL 1577

The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 990-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 700-VRMS working voltage with longer than 40 years isolation barrier life, 6-kVPK surge immunity, as well as providing low part-to-part skew, and >150-V/ns common mode noise immunity (CMTI).

The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 990-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 700-VRMS working voltage with longer than 40 years isolation barrier life, 6-kVPK surge immunity, as well as providing low part-to-part skew, and >150-V/ns common mode noise immunity (CMTI).

The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

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* 数据表 UCC21759-Q1 10A 源/库增强型隔离单通道门驱动器适用于 数据表 (Rev. A) 2020年 12月 7日
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UCC21750QDWEVM-025 — 适用于 SiC 和 IGBT 晶体管及电源模块的驱动和保护评估板

The UCC21750QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, desat feature based protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms (...)
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