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UCC21732

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适用于 IGBT/SiC FET 且具有 2 级关断的 5.7kVrms ±10A 单通道隔离式栅极驱动器

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UCC21732

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产品详情

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Fault reporting, Integrated analog to PWM sensor, Short circuit protection, Soft turnoff, Two-level turnoff Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bus voltage (max) (V) 800 Rise time (ns) 28 Fall time (ns) 24 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Fault reporting, Integrated analog to PWM sensor, Short circuit protection, Soft turnoff, Two-level turnoff Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bus voltage (max) (V) 800 Rise time (ns) 28 Fall time (ns) 24 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7-kVRMS single channel isolated gate driver
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270-ns response time fast overcurrent protection
  • Internal 2-level turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
    • VDD UVLO 12 V
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • 5.7-kVRMS single channel isolated gate driver
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270-ns response time fast overcurrent protection
  • Internal 2-level turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
    • VDD UVLO 12 V
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C

The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21732 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

The UCC21732 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21732 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

The UCC21732 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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UCC21710 正在供货 适用于 IGBT/SiC MOSFET、具有 OC 检测和内部钳位的 5.7kVrms ±10A 单通道隔离式栅极驱动器 Supports internal Miller clamp; only supports Soft Turn-OFF
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技术文档

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类型 项目标题 下载最新的英语版本 日期
* 数据表 UCC21732 10A 源/库增强型隔离单通道门驱动器 数据表 (Rev. A) 2020年 9月 21日
应用手册 栅极驱动电路中铁氧体磁珠的使用和优势 PDF | HTML 下载英文版本 PDF | HTML 2022年 11月 14日
证书 VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. R) 2022年 7月 12日
证书 FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance 2021年 10月 26日
应用手册 Performance of the Analog PWM Channel in Smart Gate Drivers 2020年 1月 16日
用户指南 UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) 2019年 9月 9日
应用手册 Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 2019年 1月 30日
技术文章 How to achieve higher system robustness in DC drives, part 3: minimum input pulse 2018年 9月 19日
技术文章 How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 2018年 5月 30日
技术文章 Boosting efficiency for your solar inverter designs 2018年 5月 24日
技术文章 How to achieve higher system robustness in DC drives, part 1: negative voltage 2018年 4月 17日

设计和开发

如需其他信息或资源，请查看下方列表，点击标题即可进入详情页面。

评估板

UCC21732QDWEVM-025 — 适用于 SiC/IGBT 的 UCC21732-Q1 汽车单通道隔离式栅极驱动器评估模块

UCC21732QDWEVM-025 是一个紧凑的单通道隔离式栅极驱动器板，可提供采用 150 x 62 x 17mm 和 106 x 62 x 30mm 封装的 SiC MOSFET 和 Si IGBT 电源模块所需的驱动电压、偏置电压、保护和诊断功能。此 TI EVM 以 5.7kVrms 增强型隔离驱动器 UCC21732 为基础，后者采用 SOIC-16DW 封装，具有 8.0mm 爬电距离和间隙。该 EVM 包含基于 SN6505B 的隔离式直流/直流变压器偏置电源。

用户指南: PDF
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仿真模型

UCC21732 Unencrypted PSPICE Transient Model

SLUM717.ZIP (6 KB) - PSpice Model
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模拟工具

PSPICE-FOR-TI — 适用于 TI 设计和模拟工具的 PSpice®

PSpice® for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence® 的模拟分析引擎。PSpice for TI 可免费使用，包括业内超大的模型库之一，涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

借助 PSpice for TI 的设计和仿真环境及其内置的模型库，您可对复杂的混合信号设计进行仿真。创建完整的终端设备设计和原型解决方案，然后再进行布局和制造，可缩短产品上市时间并降低开发成本。

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参考设计

PMP23223 — 具有辅助电源的智能隔离式栅极驱动器参考设计

此参考设计展示了 UCC21732 栅极驱动器与 UCC14xxx 系列辅助电源的组合。此设计可用于驱动各种功率管，包括直接连接到 Wolfspeed 碳化硅 (SiC) 场效应晶体管 (FET) 模块。此参考设计可用作高侧或低侧驱动器，也可使用容性模拟负载进行测试。

UCC14240-Q1、UCC14141-Q1 和 UCC14341-Q1 都是集成辅助电源的直接替代产品，每个产品都具有不同的目标输入电压和输出功率。

UCC14xxx-Q1 信息：

  • UCC14240-Q1
    • 隔离：基本型
    • 输入电压 (V)：24（21 至 27）
    • 输出电压 (V)：25（18 至 25）
    • 功率输出 (W)：2
  • (...)
测试报告: PDF
封装 引脚数 下载
SOIC (DW) 16 了解详情
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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 认证摘要
  • 持续可靠性监测

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