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UCC21736-Q1

已停产

适用于 IGBT/SiC 且具有主动短路的汽车级 5.7kVrms ±10A 单通道隔离式栅极驱动器

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UCC21736-Q1 不再投入量产
此产品不再投入生产。新设计应考虑替代产品。
open-in-new 比较替代产品
功能优于比较器件，可直接替换。
UCC21737-Q1 正在供货 适用于 SiC/IGBT、具有主动短路保护功能的汽车级 10A 隔离式单通道栅极驱动器 Automotive 10-A source and sink reinforced isolated single-channel
功能与比较器件相同但引脚有所不同。
UCC21759-Q1 正在供货 适用于 IGBT/SiC 且具有 DESAT 和内部钳位的汽车级 3.0kVrms、±10A 单通道隔离式栅极驱动器 Basic isolation, internal Miller clamp, DESAT protection, has no active short circuit or integrated analog-to-PWM sensor

UCC21736-Q1

已停产
数据表 立即订购

产品详情

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Peak output current (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 28 Fall time (ns) 24 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Peak output current (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 28 Fall time (ns) 24 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • 5.7-kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • SiC MOSFETs and IGBTs up to 2121 Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270-ns response time fast overcurrent protection
  • External active miller clamp
  • 900-mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12V VDD UVLO and -3V VEE UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • 5.7-kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • SiC MOSFETs and IGBTs up to 2121 Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270-ns response time fast overcurrent protection
  • External active miller clamp
  • 900-mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12V VDD UVLO and -3V VEE UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C

The UCC21736-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21736-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21736-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21736-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21736-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21736-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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* 数据表 UCC21736-Q1 10-A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI 数据表 (Rev. A) PDF | HTML 2020-5-6

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