ZHCSC71E March   2014  – June 2021 TPS25200

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Enable
      2. 8.3.2 Thermal Sense
      3. 8.3.3 Overcurrent Protection
      4. 8.3.4 FAULT Response
      5. 8.3.5 Output Discharge
    4. 8.4 Device Functional Modes
      1. 8.4.1 Undervoltage Lockout (UVLO)
      2. 8.4.2 Overcurrent Protection (OCP)
      3. 8.4.3 Overvoltage Clamp (OVC)
      4. 8.4.4 Overvoltage Lockout (OVLO)
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Step by Step Design Produce
        2. 9.2.2.2 Input and Output Capacitance
        3. 9.2.2.3 Programming the Current-Limit Threshold
        4. 9.2.2.4 Design Above a Minimum Current Limit
        5. 9.2.2.5 Design Below a Maximum Current Limit
        6. 9.2.2.6 Power Dissipation and Junction Temperature
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Revision History

Changes from Revision D (February 2020) to Revision E (June 2021)

  • 更新了整个文档中的表格、图和交叉参考的编号格式Go
  • Corrected package typeGo
  • Corrected package typeGo

Changes from Revision C (September 2017) to Revision D (February 2020)

Changes from Revision B (February 2017) to Revision C (September 2017)

  • 器件信息 表中将封装从 SON 更改为 WSONGo

Changes from Revision A (March 2014) to Revision B (February 2017)

Changes from Revision * (March 2014) to Revision A (March 2014)

  • Changed the toff TYP value From: 0.24 ms To: 0.22 ms Go
  • Added condition: VEN = VIN = 0 V to Figure 6-3 Go
  • Changed Figure 6-8 graph title From: Discharge Resistance To: VIN Go
  • Changed Equation 4 From = 2470 mA to = 2479 mAGo